A kind of LED core grain and preparation method thereof

Abstract

The embodiment of the invention discloses a method for making an LED core particle. According to the method, before ablation on a first metal bonding structure by using a laser scribing process, a first cutting seam penetrating and cutting a PN junction structure is formed; a first protection layer is formed on the surface of the first cutting seam to form a protection layer for the side wall of the LED core particle; and a second cutting seam penetrating a current spreading layer is formed in the first cutting seam to reduce fusant materials generated during the follow-up laser scribing process, so that absorption of emitted light in a side wall direction of the LED core particle by the fusant materials is reduced. Therefore, the luminous efficiency of the LED core particle is improved.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to an LED core particle and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED for short) is a kind of semiconductor diode, which can convert electrical energy into light energy, emit red, yellow, green, blue and other visible light, infrared and ultraviolet invisible light, and has a working voltage And low current, high reliability, long life and other advantages. Among them, the quaternary LED chip has received extensive attention from the semiconductor lighting industry due to its high luminous efficiency, wide color range, and long service life. It has been widely used in large-screen displays, traffic lights, landscape lighting, and car status lights. field. [0003] Specifically, when manufacturing a quaternary LED chip, an LED wafer including multiple quaternary LED crystal grains is usually produced first, and then the entire LED wafer is...

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Problems solved by technology

[0003] Specifically, when manufacturing a quaternary LED chip, an LED wafer including multiple quaternary LED crystal grains is usually produced first, and then the entire LED wafer is cut into a single quaternary LED chip by using a cutting method. However, when the existing manufacturing method cuts the quaternary LED wafer formed by the substrate transfer and metal bonding process into individual quaternary LED core particles, the luminous efficiency of the quaternary LED core particles will decrease (in Before and after laser scribing, the luminous efficiency of the chip will be tested to evaluate the impact of laser scribing)

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