Supercharge Your Innovation With Domain-Expert AI Agents!

Method and device for sensing current

A technology of sensing device and current, applied in the direction of measuring device, only measuring current, measuring current/voltage, etc., can solve problems such as increasing complexity and cost

Active Publication Date: 2021-04-02
TEXAS INSTR INC
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A complex system can implement calibration methods to reduce errors, but this process adds unnecessary complexity and more cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for sensing current
  • Method and device for sensing current
  • Method and device for sensing current

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated.

[0037] When the term "coupled" is used herein to describe the relationship between elements, the term "coupled" includes "connected" or "directly connected", and further includes connections made with intervening elements, so more elements and various A connection may exist between any elements which are described as "coupled".

[0038] In one aspect of the example embodiments, the architecture reduces the temperature-dependent current estimate from the drain-to-source voltage of a power transistor. Furthermore, example architectures and methods minimize the effects of temperature and process variations to achieve a more accurate current ISENSE that is stable across a wide temperature range.

[0039] Figure 5 A circuit schematic 500 showing an arrangement using an aspect of the example embodiment. exist Figure 5 In , the power FET 510 is...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Examples described include current sensing through power semiconductor devices that have reduced sensitivity to temperature and process variations. An example arrangement (500) includes: a power switch (510) coupled between a voltage input and an output voltage terminal supplying current to a load (LOAD); a first isolation switch (520) coupled between the voltage input and a first between nodes (535); an amplifier (526) having a pair of differential inputs coupled to a first node (535) and a second node (537) to output in response to the difference at the differential inputs voltage; and a first current source (II) coupled between the positive supply voltage and the first node (535) to output a first current in response to the voltage output from the amplifier (526). The first current is proportional to the current through the power switch (510) and is proportional to the ratio of the on-resistance of the power switch (510) to the on-resistance of the first isolation switch (520).

Description

technical field [0001] The present application relates generally to electronic circuits, and more particularly to methods and circuits for sensing load current in power semiconductor devices over a wide temperature range. Background technique [0002] Field Effect Transistors (FETs) have been a staple device for low resistance electronic switches since their introduction to the market. In common applications, power FETs or switches implemented using FETs are used to couple a supply voltage to a load at the output voltage terminals. Measuring the current through a FET is a common requirement in control circuits designed to keep the system (of which the FET and the control circuit are a part) within its operating parameters, especially as current limiting is implemented under high load conditions to prevent A safety measure against damage or failure of FET devices. When the FET is on and the resistance between the drain and source (R DS on) low, the maximum current occurs i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R19/00
CPCH03K17/145H03K2217/0027G01R19/0092H03K17/6871
Inventor R·钱德拉塞克兰C·卡亚
Owner TEXAS INSTR INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More