188results about How to "Little temperature dependence" patented technology

A reciprocating-piston internal combustion engine having a hydraulic adjustment mechanism which is assigned to a connecting rod and which comprises at least one eccentric, for adjusting at least one variable compression ratio in at least one cylinder of the reciprocating-piston internal combustion engine by means of a change in an effective length of a connecting rod. Also proposed is a method for changing the effective length of a connecting rod.

The present invention provides an oxide magnetic material, which includes a primary phase of a hexagonal ferrite containing metallic elements Ca, R, Fe and M, where M represents at least one element selected from the group including Co, Ni and Zn, and R represents at least one element selected from the group including Bi and rare earth elements including Y, with La being essentially included in R; wherein the proportions of the metallic elements Ca, R, Fe and M with respect to the total amount of the metallic elements are from 1 to 13 atomic % for Ca, from 0.05 to 10 atomic % for R, from 80 to 95 atomic % for Fe, and from 1 to 7 atomic % for M. The present invention also provides ferrite particles, a bonded magnet, a sintered magnet, a process for producing them, and a magnetic recording medium, which contain the oxide magnetic material.

A demodulator is provided for a multilevel differential phase shift keyed signal, capable of eliminating polarization dependence due to birefringence and polarization coupling-induced light resulting from a waveguide structure, and also, polarization dependence due to dynamic birefringence produced at the time of driving a variable phase adjuster. The demodulator is configured of an optical delay line interferometer of a waveguide interference type. The S / N ratio of a demodulated signal in the demodulator formed by the optical delay line interferometer can be also improved. Further, both the polarization dependence and the temperature dependence of the optical delay line interferometer can be reduced. The disposition of a polarization converter and groves filled with a temperature compensation material makes it possible to provide a circuit configuration suitable for eliminating the polarization dependence and the temperature dependence of the optical delay line interferometer.

Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlxIn1-xSb mixed crystal layer formed on a substrate, and an InAsxSb1-x (0<x≦1) thin film conducting layer directly formed on the AlxIn1-xSb layer, in which the AlxIn1-xSb mixed crystal layer is a layer that exhibits higher resistance than the InAsxSb1-x thin film conducting layer or exhibits insulation or p-type conductivity, and its band gap is greater than the InAsxSb1-x thin film conducting layer, and the a lattice mismatch is +1.3% to −0.8%.

The present invention provides an output current detecting circuit capable of suppressing the power loss in a sensing resistor and thereby suppressing the rise of a chip temperature and a transmission circuit equipped with the output current detecting circuit. The output current detecting circuit includes: a current detecting transistor having a size smaller than that of an output transistor and a control terminal, to which a voltage same as a control voltage of the output transistor is applied; a sensing resistor connected to the current detecting transistor in a serial mode; a comparison circuit comparing a voltage converted by the sensing resistor and a reference voltage to judge a magnitude of a current flowing through the output transistor; and a reference voltage generating circuit, wherein the reference voltage generating circuit includes a constant current circuit flowing a constant current and a resistance element having one terminal connected to a power source voltage terminal, the reference voltage generating circuit generating the reference voltage based on a power source voltage by the conversion of the constant current into a voltage by flowing the constant current through the resistance element.

Composition containing, based in each case on its total weight,A) 50.0% by weight to 99.5% by weight of at least one (meth)acrylate (co)polymer andB) 0.5% by weight to 50.0% by weight of at least one copolymer obtainable by polymerisation of a monomer mixture comprisingi. 70% by weight to 92% by weight of a vinylaromatic monomer andii. 8% by weight to 30% by weight of acrylonitrile or methacrylonitrile or mixtures thereof andiii. 0% by weight to 22% by weight of at least one further monomer, the composition having a haze according to ASTM D1003 of less than 2.0% at 23° C. and a haze according to ASTM D1003 of less than 4.0% at 40° C. and the composition containing at least one (meth)acrylate (co)polymer a) having a solution viscosity in chloroform at 25° C. (ISO 1628—part 6) of greater than 55 ml / g.The mouldings obtainable from the composition are distinguished in particular by improved stress cracking resistance and are suitable in particular for coverings, finishes or films.

The invention relates to a composition containing, in relation to the total weight of said composition, A) between 50.0% by weight and 99.5% by weight of at least one (meth)acrylate (co)polymer and B) between 0.5% by weight and 50.0% by weight of at least one copolymer, obtained by the polymerisation of a monomer mixture consisting of i. between 70% by weight and 92% by weight of a vinyl aromatic monomer and ii. between 8% by weight and 30% by weight of acryl nitrile or methacryl nitrile or mixtures thereof iii. between 0% by weight and 22% by weight of at least one other monomer, the composition having at 50° C. a ΔE of less than 0.15, ΔE being defined according to the relationship (1): (1) in which ΔL*: the modification of the colour co-ordinates L* compared with the colour co-ordinates L* at 23° C., Δa*: the modification of the colour co-ordinates a* compared with the colour co-ordinates a* at 23° C., Δb*: the modification of the colour co-ordinates b* compared to the colour co-ordinates b* at 23° C., and the composition contains at least one (meth)acrylate (co)polymer a) with a solution viscosity in chloroform at 25° C. (ISO 1628 part 6) greater than 55 ml / g. The moulded bodies that can be obtained from the composition are characterised in particular by improved stress cracking resistance and are suitable in particular for use in coatings, paints or films.

The invention discloses a method for polymerizing core-shell type aqueous polyurethane-polyacrylate (PUA) emulsion by in-situ radiation, relating to the production method and process which are applied to textiles coating agent products. The method possesses the advantages of in-situ emulsion polymerization and radiation polymerization during product preparation process, solving the problems that the emulsifier and organic cosolvents existing in the current products pollute the environment, the products are poor in water resistance, the polymerization rate is hardly controlled, and the products are not stable among production batches, etc. The products have the following advantages of excellent water resistance, heat resistance, resistance to chemicals and wear resistance as well as low cost, availability for textile printing adhesion auxiliaries, emission without emulsifier and volatile organic solvents, and compliance with the requirements of environmental protection.

There is provided a polyamide resin composition reinforced with glass fiber produced by the melt kneading of a mixture where 60 to 80 parts by weight of glass fiber bundles (B) comprising a glass fiber having a flat cross section whose flatness degree is 1.5 to 8 and having an ignition loss at 625° C. for 0.5 hour of not more than 0.8% by weight are added to 40 to 20 parts by weight of polyamide (A), characterized in that, during the above melt kneading, a polyamide-reactive silane coupling agent (C) is added to the above mixture in a rate of 0.1 to 1.0% by weight of the above glass fiber bundles (B). The polyamide resin composition of the present invention has high bending strength, bending elastic modulus and Charpy impact strength (at 23° C. and −40° C.) by a specific fracture mode which have been never achieved before, and it is excellent in productivity.

A demodulator is provided for a multilevel differential phase shift keyed signal, capable of eliminating polarization dependence due to birefringence and polarization coupling-induced light resulting from a waveguide structure, and also, polarization dependence due to dynamic birefringence produced at the time of driving a variable phase adjuster. The demodulator is configured of an optical delay line interferometer of a waveguide interference type. The S / N ratio of a demodulated signal in the demodulator formed by the optical delay line interferometer can be also improved. Further, both the polarization dependence and the temperature dependence of the optical delay line interferometer can be reduced. The disposition of a polarization converter and groves filled with a temperature compensation material makes it possible to provide a circuit configuration suitable for eliminating the polarization dependence and the temperature dependence of the optical delay line interferometer.

To control a substrate voltage of a MOSFET so that drain current having a given gate voltage of sub-threshold region or the saturation region of the MOSFET does not depend on the temperature or the variations in processes. A semiconductor substrate comprises an integrated circuit body 16A, a monitoring means 15A for monitoring the drain current of at least one of a plurality of MOSFETs, and a substrate voltage adjusting means 14A for controlling a substrate voltage BP of the semiconductor substrate so that the drain current becomes constant. The monitoring means comprises a constant-current source 12A and a monitor MOSFET 11A, formed on the same substrate as the plurality of MOSFETs. The substrate voltage adjusting means comprises a comparison means 13A for comparing the source potential of the monitor MOSFET and a predetermined reference potential, while the drain terminal of the monitor MOSFET and the drain terminals of the plurality of MOSFETs of the integrated circuit body are connected to a ground potential, and the comparing means 13A feeds comparison results back to the substrate voltage of the monitor MOSFET.

The strippable protective polyvinyl butyral coating is produced with polyvinyl butyral, ethanol, methanol, ethyl acetate, butyl acetate, n-butanol and butanone as material. Modified polyvinyl butylral liquid is painted to the surface of automobile, furniture, electric appliance and other objects to form protective coating at normal temperature. The coating is continuous, homogeneous, tough and transparent and can be stripped for recovery. The coating is sun-proof, water, oil, alkali, salt solution and dilute acid resistant, and has wide application and no environmental pollution.

The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline silicon layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

The invention provides a phosphor, a light emitting device and a white light emitting diode. The phosphor includes a compound represented by formula (1), and Eu as an activator. aM12O bM2O cM3O2 (1) [In the formula (1), M1 is at least one selected from the group consisting of Li, Na, K, Rb and Cs, and M2 is selected from the group consisting of Ca, Sr, Ba, Mg and At least one selected from the group consisting of Zn, M3 is at least one selected from the group consisting of Si and Ge, 0.1≦a≦1.5, 0.8≦b≦1.2 and 0.8≦c≦1.2, wherein, when M1 is Li , when M3 is Si and a=b=c=1, M2 is not Sr alone. ]

Provided is a composition for forming an antifouling coating film which, in seawater, can effectively have antifouling performance over long and has a small temperature dependence of coating film dissolution rate and which is highly safe for the environment. The antifouling coating composition is characterized by comprising (A) a triorganosilyl-ester-containing copolymer obtained from a mixture of (a) a triorganosilyl methacrylate monomer represented by general formula (1) (wherein R<1>, R<2>, and R<3> are the same or different and each represents an alpha-branched C3-6 alkyl or phenyl) and (b) a methoxyalkyl methacrylate monomer represented by general formula (2) (wherein R<4> represents a C2-4 alkylene), the content of the monomer (a) in the mixture being 45 to 65 wt.% and the total content of the monomer (a) and the monomer (b) in the mixture being 80 wt.% or higher, and (B) at least one copper salt selected from the copper salt of rosin and the copper salts of rosin derivatives.

A magneto-resistive layer system, in which a layer arrangement is provided in an environment of a magneto-resistive layer stack working on the basis of the GMR effect or the AMR effect, in particular the layer arrangement generating a resulting magnetic field that acts upon the magneto-resistive layer stack. The layer arrangement has a first magnetic layer and a second magnetic layer, which are separated from one another by a non-magnetic intermediate layer and are ferromagnetically exchange-coupled via the intermediate layer. Furthermore, a sensor element having such a layer system is provided, particularly for the detection of magnetic fields with respect to their strength and / or direction.

An electromagnetic wave absorber comprising (a) soft ferrite having its surface treated with a silane compound having no functional group, (c) magnetite and (d) silicone, or comprising (a) soft ferrite having its surface treated with a silane compound having no functional group, (b) flat soft magnetic metal powder, (c) magnetite and (d) silicone, which electromagnetic wave absorber excels in electromagnetic wave absorption, heat conduction and flame resistance, exhibiting less temperature dependence, and which electromagnetic wave absorber is soft, excelling in adhesion strength and further excelling in high resistance high insulation properties and in energy conversion efficiency being stable in MHz to 10GHz broadband frequency. There is further provided a laminated electromagnetic wave absorber comprising the above electromagnetic wave absorber overlaid with a reflection layer of conductor, which laminated electromagnetic wave absorber can be closely stuck onto an unwanted electromagnetic wave emission source such as a high-speed operating device, having such an adhesive strength that even when stuck to a horizontal glassy-surface ceiling face of resin-made cage, would not fall.

Subject The subject is to provide a liquid crystal composition that satisfies at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a suitable optical anisotropy, a large dielectric anisotropy, a large elastic constant ratio, a small temperature dependence of the threshold voltage, a small frequency dependence of the dielectric anisotropy and a short helical pitch, or that is suitably balanced regarding at least two of the characteristics. The subject is to provide a STN device that has a short response time, a large contrast ratio, a low threshold voltage, a small electric power consumption, a steep voltage-transmission curve and a small light leak.Means for Solving the Subject The invention provides a nematic liquid crystal composition that include a specific optically active compound as a first component and a specific compound having a positively large dielectric anisotropy as a second component, and that optionally may include a specific compound having a high maximum temperature or a small viscosity as a third component and a specific compound having a positively large dielectric anisotropy as a fourth component, and provides a liquid crystal display device containing this composition.

A circuit device includes a processor adapted to perform a signal processing of temperature compensation of an oscillation frequency based on temperature detection data from an external temperature sensor disposed outside the circuit device to output frequency control data, and an oscillation signal generation circuit adapted to generate an oscillation signal with the oscillation frequency corresponding to the frequency control data using the frequency control data and a resonator disposed in a thermostatic oven.

A piezoelectric actuator (1) comprising a piezoelectric element (2) having a pair of electrodes formed on the surface of a piezoelectric ceramic as a drive source. The piezoelectric actuator (1) satisfies at least one of following requirements (a) to (c). (a) Variation width WC of apparent dynamic capacitance C (F) due to temperature variation falls within +-11% in a specific temperature range of -30 to 80 DEG C. (b) Variation width WL of displacement L (mum) due to temperature variation falls within +-14% in a specific temperature range of -30 to 80 DEG C. (c) Variation width WL / C of L / C due to temperature variation falls within +-12% in a specific temperature range of -30 to 80 DEG C, assuming that the apparent dynamic capacitance is C (F) and the displacement is L (mum).

The invention belongs to the technical field of microporous rubber and discloses a microporous rubber base plate and a preparation process thereof. The microporous rubber base plate has the major technical characteristic that the microporous rubber base plate body is prepared from the following components in parts by weight: 100 parts of ethylene-propylene-diene rubber, 6-18 parts of polyethylene glycol mixture, 60-100 parts of a filling material, 30-60 parts of alkane oil, 6-12 parts of a foaming agent, 2.5-5.5 parts of a vulcanizing agent and 2-5.5 parts of an accelerant. According to the microporous rubber base plate, an evenly diffused multi-phase structure is formed by mechanically blending low-Mooney EPDM and high-Mooney EPDM, and in combination with benzenesulfonic acid formed in the reaction process of neutralizing the foaming agent 4,4-oxodibenzenesulfonyl hydrazide by use of the polyethylene glycol mixture, the foaming ratio can be increased. In addition, accessories carbon black excellent in reinforcement property and porous diatomite filler excellent in aging property and light in weight are adopted, and consequently, the microporous rubber base plate has such properties as high strength, low rigidity and low temperature dependency.

There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content α of Li on a metal basis is not less than 0.0013 parts by weight and is not greater than 0.0280 parts by weight, and content β of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight(Ba1-xCax)a(Ti1-y-zZrySnz)O3  (1)(in the formula (1), 0.09≦x≦0.30, 0.074<y≦0.085, 0≦z≦0.02, and 0.986≦a≦1.02)

The invention provides a container type data center energy-saving and heat dissipation method. A container for storing an electronic equipment cabinet and a heat exchanger which is arranged at the top of the container and is used for providing heat dissipation are included; an antistatic floor arranged at the bottom of the container and a sealed circulating channel which is connected with the heat exchanger and is used for cooling electronic equipment are further included; a draught fan which provides power for inner air circulation and a draught fan which provides power for outer air circulation, and a coiled pipe cooling device which is used for emergently cooling the electronic equipment and a cooling water curtain device arranged on the outer side of the container are further included. By virtue of the container type data center energy-saving and heat dissipation method, green cooling of the electronic equipment in a data center can be realized; meanwhile, accurate cooling also can be realized, an air conveying distance and an air returning distance are greatly shortened, the loss of energy sources is reduced and the heat dissipation efficiency is improved.

The invention provides a reference current circuit which can reduce temperature dependency of reference current even though in the situation of using a resistor of a resistance provided with very low temperature dependency. The reference current circuit comprises: a reference voltage V receiving temperature compensation and a noninverting amplifier circuit 110 generating a voltage V on an output point; a current source circuit 120 consisted of a transistor Q1 which is connected to the output point via the resistor and a transistor Q2 which receives a voltage equal to a voltage V generated among terminals of Q1 and generating related circuit. The circuit 110 (i) comprises: a third transistor Q3. A voltage V generated among the terminals of the Q3 is provided with the same temperature property with V, and is structured to make V is the sum of (a) a temperature compensation voltage component based on the reference voltage V and (b) a voltage component equal to the voltage V.

A comparator circuit includes a current mirror circuit, a differential pair, and a first current source between first and second power supply lines. The differential pair includes a first MOS transistor of enhancement mode n-type having a gate electrode at which an input signal is supplied, and a second MOS transistor of depletion mode n-type. A source of the second MOS transistor is connected with a source of the first MOS transistor and a threshold voltage of the second MOS transistor is lower than that of the first MOS transistor. A gate electrode of the first MOS transistor is formed by polycrystalline silicon which contains a p-type impurity. A gate electrode of the second MOS transistor is formed by polycrystalline silicon which contains an n-type impurity and is connected with the first power supply line. An output signal is output based on a drain voltage of the second MOS transistor.

A semiconductor acceleration sensor is disclosed which has a small difference in acceleration detection sensitivity among X, Y, and Z axes and a high detection sensitivity. The acceleration sensor has a mass portion in its center, a support frame surrounding the mass portion, and a plurality of flexible arms connecting the mass portion and the support frame. The flexible arm has wider portions on both ends and a narrower portion between the wider portions. Piezo resistors are restrictedly provided within a top surface region of the wider portion of the flexible arm, and through holes connecting metal wires and the piezo resistors are disposed on the mass portion / support frame. The plurality of flexible arms are symmetric with respect to the center of the mass portion, and each of the flexible arms is symmetric with respect to the center line of the flexible arm.

A detector for a proximity sensor, includes: a sensing portion including a pair of sensing coils which has central axes along a direction intersecting with a moving direction of a sensed object moving in a predetermined moving path and is provided so as to interpose the moving path; a circuit block including a capacitor composing an LC resonant circuit with the sensing coils of the sensing portion and provided with an oscillator which oscillates the LC resonant circuit; and an electric connector composed of first connection terminals and a first conductor pattern that connect the sensing coils of the sensing portion in series, and second connection terminals and a second conductor pattern that connect the sensing coils to the oscillator.

The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about 2 / 3 times an input impedance of the amplification unit.

A rotating machine comprising a sintered ferrite magnet having an M-type ferrite structure, comprising Ca, an R element that is at least one of rare earth elements and indispensably includes La, Ba, Fe and Co as indispensable elements, and having a composition represented by the formula: Ca1−x−yRxBayFe2n−zCoz, wherein (1−x−y), x, y, z and n represent the contents of Ca, the R element, Ba and Co, and a molar ratio, meeting 0.3≦1−x−y≦0.65, 0.2≦x≦0.65, 0.001≦y≦0.2, 0.03≦z≦0.65, 4≦n≦7, and 1−x−y>y; a bonded magnet comprising ferrite powder having the above composition and a binder, and a magnet roll, at least one magnetic pole portion of which is made of the above bonded magnet.

A quantum nanostructure semiconductor laser is provided that does not use a buried structure defined by etching and regrowth processes in the prior arts, and can be manufactured using a procedure that is simple and has good reproducibility. This helps to reduce the threshold current and provides good lasing wavelength stability. The laser has a stripe-shaped ridge with a plurality of V-grooves formed on a compound semiconductor substrate in the direction of laser beam emisson, with the V-grooves being arrayed in parallel, with each V-groove extending orthogonally to the direction of laser beam emission. On the ridge, an optical waveguide is provided that comprises a lower cladding layer, a plurality of quantum wires and an upper cladding layer formed in order by a crystal growth process. The quantum wires are formed to a finite length corresponding to the stripe width of the laser beam, and are each located at a position corresponding to a V-groove, thereby constituting the laser active region. The optical waveguide is trapezoidal in shape, and has a peripheral sidewall that is at least as high as a height at which the quantum wires are located, and is exposed or covered only by an insulation layer.