Semiconductor integrated circuit device

An integrated circuit and semiconductor technology, applied in the direction of semiconductor devices, circuits, transistors, etc., can solve the problems of difficult reading and writing data stable operation, reduced noise tolerance, etc., to reduce temperature dependence, improve operation stability, The effect of reducing the dependency on process variation

Inactive Publication Date: 2004-05-19
SOCIONEXT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In addition, in an SRAM as an example of a semiconductor integrated circuit device, it has been reported that as the miniaturization increases,

Method used

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  • Semiconductor integrated circuit device
  • Semiconductor integrated circuit device
  • Semiconductor integrated circuit device

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Example

[0129] First embodiment

[0130] figure 1 Is a circuit diagram showing the semiconductor integrated circuit device 10A related to this embodiment, such as figure 1 As shown, the semiconductor integrated circuit device 10A has a monitoring device 15A, a threshold (Vth) stabilization circuit 14A (substrate voltage adjustment device), and an integrated circuit body 16A. The monitoring device 15A is composed of a P-type MOSFET 11A and a constant current source 12A. The (Vth) stabilization circuit 14A (substrate voltage adjustment device) is composed of a comparison unit 13A (comparison device).

[0131] In the first embodiment, the threshold value Vth of the MOSFET is set as Vgs (gate-source voltage) when VDD=1V, for example, when Ids=50NA×(W / L). In addition, Ids is the current between the source and drain of the MOSFET, W is the channel width of the MOSFET, and L is the channel length of the MOSFET.

[0132] The P-type MOSFET 11A is arranged on the same substrate as the integrated ...

Example

[0161] Second embodiment

[0162] Figure 5 It is a circuit diagram showing the semiconductor integrated circuit device 10B related to this embodiment. Such as Figure 5 As shown, the semiconductor integrated circuit device 10B has a monitoring device 15B, a threshold (Vth) constant circuit 14B (substrate voltage adjustment device), and an integrated circuit main body 16B. The monitoring device is composed of an N-type MOSFET 11B and a constant current source 12B, and the threshold (Vth) The Vth constant circuit 14B (substrate voltage adjustment device) is constituted by a comparison section 13B (comparison device).

[0163] In the second embodiment, the threshold value Vth of the MOSFET, for example, when VDD=1V, Vgs (gate-source voltage) when Ids=50NA×(W / L) is formed as Vth. In addition, Ids is the current between the source and drain of the MOSFET, W is the channel width of the MOSFET, and L is the channel length of the MOSFET.

[0164] The N-type MOSFET 11B is arranged on the...

Example

[0200] The third embodiment

[0201] FIG. 8 is a circuit diagram showing the semiconductor integrated circuit device 20A of this embodiment.

[0202] As shown in FIG. 8, the semiconductor integrated circuit device 20A has a monitoring device 25A, a drain current (Ids) stabilizing circuit 24A (substrate voltage regulating device), and an integrated circuit main body 26A. The monitoring device 25A is composed of a P-type MOSFET 21A and a constant current The source 22A is constituted, and the drain current (Ids) stabilization circuit 24A (substrate voltage adjustment device) is constituted by the comparison section 23A (comparison device).

[0203] In the third embodiment, the saturation current of the MOSFET is used as, for example, the current between the source and the drain when Vgs=1V, VDD=1V, and Vss=0.

[0204] The constant drain current (Ids) circuit 24A is a circuit (substrate voltage regulator) that controls the substrate voltage of the MOSFET, and stabilizes the drain cur...

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Abstract

To control a substrate voltage of a MOSFET so that drain current having a given gate voltage of sub-threshold region or the saturation region of the MOSFET does not depend on the temperature or the variations in processes. A semiconductor substrate comprises an integrated circuit body 16A, a monitoring means 15A for monitoring the drain current of at least one of a plurality of MOSFETs, and a substrate voltage adjusting means 14A for controlling a substrate voltage BP of the semiconductor substrate so that the drain current becomes constant. The monitoring means comprises a constant-current source 12A and a monitor MOSFET 11A, formed on the same substrate as the plurality of MOSFETs. The substrate voltage adjusting means comprises a comparison means 13A for comparing the source potential of the monitor MOSFET and a predetermined reference potential, while the drain terminal of the monitor MOSFET and the drain terminals of the plurality of MOSFETs of the integrated circuit body are connected to a ground potential, and the comparing means 13A feeds comparison results back to the substrate voltage of the monitor MOSFET.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit device, and more particularly to a semiconductor integrated circuit device capable of controlling a substrate voltage driven by a low power supply voltage relative to miniaturized MOSFETs. Background technique [0002] In recent years, along with the evolution of miniaturization processes for the manufacture of semiconductor integrated circuit devices, the channel length of MOSFETs has begun to be manufactured with processes of 0.1 μm or less. In response to the miniaturization of such a process, a power supply voltage as low as 1V or less has been used, and there are reports as follows. [0003] In an environment where the power supply voltage is less than 1V, the threshold value and voltage value of the MOSFET are not calibrated, and it is reported that the operating speed of the CMOS circuit reverses under low temperature and high temperature conditions (see Non-Patent Document 1). ...

Claims

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Application Information

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IPC IPC(8): H01L27/092H01L29/78
Inventor 炭田昌哉崎山史朗木下雅善
Owner SOCIONEXT INC
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