Semiconductor integrated circuit device

Abstract

To control a substrate voltage of a MOSFET so that drain current having a given gate voltage of sub-threshold region or the saturation region of the MOSFET does not depend on the temperature or the variations in processes. A semiconductor substrate comprises an integrated circuit body 16A, a monitoring means 15A for monitoring the drain current of at least one of a plurality of MOSFETs, and a substrate voltage adjusting means 14A for controlling a substrate voltage BP of the semiconductor substrate so that the drain current becomes constant. The monitoring means comprises a constant-current source 12A and a monitor MOSFET 11A, formed on the same substrate as the plurality of MOSFETs. The substrate voltage adjusting means comprises a comparison means 13A for comparing the source potential of the monitor MOSFET and a predetermined reference potential, while the drain terminal of the monitor MOSFET and the drain terminals of the plurality of MOSFETs of the integrated circuit body are connected to a ground potential, and the comparing means 13A feeds comparison results back to the substrate voltage of the monitor MOSFET.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit device, and more particularly to a semiconductor integrated circuit device capable of controlling a substrate voltage driven by a low power supply voltage relative to miniaturized MOSFETs. Background technique [0002] In recent years, along with the evolution of miniaturization processes for the manufacture of semiconductor integrated circuit devices, the channel length of MOSFETs has begun to be manufactured with processes of 0.1 μm or less. In response to the miniaturization of such a process, a power supply voltage as low as 1V or less has been used, and there are reports as follows. [0003] In an environment where the power supply voltage is less than 1V, the threshold value and voltage value of the MOSFET are not calibrated, and it is reported that the operating speed of the CMOS circuit reverses under low temperature and high temperature conditions (see Non-Patent Document 1). ...

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Problems solved by technology

[0004] In addition, in an SRAM as an example of a semiconductor integrated circuit device, it has been reported that as the miniaturization increases, the stable operation of reading and writing data to the memory cell becomes difficult due to a decrease in the noise margin (see Non-Patent Document 2)

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