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Integrated fluxgate device

A fluxgate, integrated circuit technology, applied in measuring devices, magnetic field measurement using the principle of magnetic flux control, measurement of magnetic variables, etc., can solve the problems of high implementation cost and complicated operation.

Active Publication Date: 2018-08-31
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these solutions are often costly to implement and complex to operate

Method used

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  • Integrated fluxgate device
  • Integrated fluxgate device
  • Integrated fluxgate device

Examples

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Embodiment Construction

[0011] In the various drawings, the same reference numerals denote the same elements. The drawings are not drawn to scale and are provided to illustrate the description.

[0012] Example embodiments include a fluxgate device that can be fabricated using a low cost and high yield process that can be integrated with one or more control circuits.

[0013] figure 1 A cross-sectional view of an integrated fluxgate circuit 100 is shown according to aspects of an example embodiment. The integrated fluxgate circuit 100 includes a circuit 110 and a fluxgate device 120 integrated with the circuit 110 to form a single integrated circuit chip. According to aspects of an example embodiment, the circuit 110 includes one or more control circuits coupled to the fluxgate device 120 . Accordingly, the circuit 110 may be used to control the operation of the fluxgate device 120 . For example, circuit 110 may calibrate fluxgate device 120 and receive one or more current signals from fluxgate d...

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Abstract

In described examples, an integrated circuit (100) has a substrate (101), a circuit (110), a core structure (130), a first encapsulation layer (136), a second encapsulation layer (138), and an oxide layer (140). The circuit (110) includes transistors (103, 104) with active regions (105, 106) developed on the substrate (101) and a metal layer (108, 109) formed above the active regions (105, 106) toprovide interconnections for the transistors (103, 104). The core structure (130) is formed above the metal layer (108, 109). The first encapsulation layer (136) covers the core structure (130), andit has a first thermal expansion coefficient. The second encapsulation layer (138) covers the first encapsulation layer (136) over the core structure (130), and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer (140) is formed above the second encapsulation layer (138). The oxide layer (140) includes an oxide thickness (143) sufficient to mitigate a thermal stress between the first and second encapsulation layers (136, 138).

Description

technical field [0001] The present invention relates generally to fluxgate devices, and more particularly to the manufacture of integrated fluxgate devices. Background technique [0002] A fluxgate device generally includes a magnetic core structure and a coil member wound around the magnetic core. Fluxgate devices can be used to detect changes in magnetic flux in the environment adjacent to a magnetic core structure. Attempts have been made to interface fluxgate devices with integrated circuits for use in a variety of industrial applications. For example, a fluxgate device interfaced with a control circuit may be suitable as a current measurement device for a motor control system, or as a position sensing device for a robotic system. However, these solutions are often costly to implement and complex to operate. Contents of the invention [0003] In an example of the described systems and techniques related to fabricating an integrated fluxgate device, an integrated flu...

Claims

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Application Information

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IPC IPC(8): H01L43/06H01L27/22
CPCG01R33/05H01L27/0617G01R33/04
Inventor M·M·艾莎M·R·基米奇S·拉文库尔S·切瓦恰罗恩库尔M·L·詹森
Owner TEXAS INSTR INC