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Semiconductor device and forming method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor pattern performance, and achieve the effects of improving performance, small height differences, and avoiding damage

Active Publication Date: 2018-09-25
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of the pattern in the semiconductor device formed by the patterning process in the prior art is poor

Method used

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  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

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Experimental program
Comparison scheme
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Embodiment Construction

[0030] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.

[0031] Figure 1 to Figure 4 It is a structural schematic diagram of the formation process of a semiconductor device.

[0032] refer to figure 1 , providing a material layer 100 to be etched; forming a sacrificial layer 110 with a pattern on the material layer 100 to be etched, the top surface of the sacrificial layer 110 has an etching stopper layer 120; forming a side wall on the side wall of the sacrificial layer 110 121.

[0033] refer to figure 2 , after forming the spacer 121, the etch stop layer 120 is removed (refer to figure 1 ).

[0034] refer to image 3 , remove the etch stop layer 120 (refer to figure 1 ), remove the sacrificial layer 110 (refer to figure 2 ).

[0035] refer to Figure 4 , remove the sacrificial layer 110 (refer to figure 2 ), use the sidewall 121 as a mask to etch the material layer 100 to be etched (refer to image 3 ), ...

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PUM

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Abstract

Disclosed are a semiconductor device and a forming method thereof. The method includes the following steps: providing a to-be-etched material layer, wherein the to-be-etched material layer is providedwith several separate sacrificial layers, the top surfaces of the sacrificial layers are provided with etching barrier layers, and grooves are arranged between the adjacent sacrificial layers; forming side walls on the sidewalls of the sacrificial layers and the etching barrier layers; forming protective layers on the top surfaces of the etching barrier layers and the side walls and in the grooves; flattening the protective layers, the side walls and the etching barrier layers to expose the top surfaces of the sacrificial layers; removing the protective layers and the sacrificial layers afterthe protective layers, the side walls and the etching barrier layers are flattened; and etching the to-be-etched material layer by taking the side walls as masks after the protective layers and the sacrificial layers are removed. The method can improve the performance of patterns in semiconductor devices.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] In the manufacturing process of semiconductor devices, the pattern on the mask plate is usually transferred to the substrate by photolithography process. The photolithography process includes: providing a substrate; forming a photoresist on the semiconductor substrate; exposing and developing the photoresist to form a patterned photoresist, so that the pattern on the mask plate is transferred to the photoresist Middle; the substrate is etched with the patterned photoresist as a mask, so that the pattern on the photoresist is transferred to the substrate; the photoresist is removed. With the continuous shrinking of the size of semiconductor devices, the critical dimensions of lithography are gradually approaching or even exceeding the physical limit of lithography, which poses more severe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302
CPCH01L21/302
Inventor 郑二虎
Owner SEMICON MFG INT (SHANGHAI) CORP