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Semiconductor device having an internal-field-guarded active region

A technology for semiconductors and active regions, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as reduced luminous efficiency, and achieve the effects of reduced influence of thickness changes, increased possibilities, and increased internal quantum efficiency

Active Publication Date: 2018-09-25
TECH UNIV BERLIN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Reduced overlap of wave functions of electrons and holes is the cause of reduced luminous efficiency in nitride semiconductor-based semiconductor light-emitting devices

Method used

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  • Semiconductor device having an internal-field-guarded active region
  • Semiconductor device having an internal-field-guarded active region
  • Semiconductor device having an internal-field-guarded active region

Examples

Experimental program
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Embodiment Construction

[0059] figure 1 is a schematic cross-sectional view of one embodiment of a quantum dot semiconductor device 100 forming an emitter. Also refer to figure 2 , figure 2 show figure 1 A magnified view of part S indicated by the dashed line in .

[0060] The quantum dot semiconductor device 100 comprises a layer sequence 102 formed from a plurality of layers of polar semiconductor material, which will be described below. The semiconductor material layers are Group III nitride semiconductors and each have a hexagonal crystal structure. The layer sequence 102 consists of layers of semiconductor material, each of which has a direction figure 1 The crystallographic axis in the direction c indicated by the vertical arrow. The c-direction also forms the stacking direction of the layer sequence 102 . Usually, the layer sequence 102 is produced by epitaxial growth, so that the growth direction of the layer sequence 102 is the c direction.

[0061] In particular, the layer sequenc...

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Abstract

A semiconductor device comprises a layer sequence formed by a plurality of polar single crystalline semiconductor material layers that each has a crystal axis pointing in a direction of crystalline polarity and a stacking direction of the layer sequence. A core layer sequence is formed by an active region made of an active layer stack or a plurality of repetitions of the active layer stack. The active layer stack has an active layer having a first material composition associated with a first band gap energy, and carrier-confinement layers embedding the active layer on at least two opposite sides thereof, having a second material composition associated with a second band gap energy larger than the first band gap energy. A pair of polarization guard layers is arranged adjacent to the activeregion and embedding the active region on opposite sides thereof.

Description

technical field [0001] The present invention relates to a semiconductor device. Background technique [0002] Polarity in a semiconductor material arises from its crystal structure, and potentially from lattice distortions of the lattice caused, inter alia, by strained lattices in semiconductor heterostructures. [0003] Examples of polar semiconductors are compound semiconductors of a hexagonal crystal structure (which have a polarity axis along its c-direction) and compound semiconductors of a zinc-blende structure (which have a polarity axis along its [111] direction). The following presentation will focus on hexagonal polar semiconductors as a non-limiting example. [0004] A compound semiconductor of a hexagonal crystal structure has constituent atoms arranged in a wurtzite structure. A non-limiting example from the group of polar semiconductor materials are compound semiconductors of hexagonal crystal structure, such as III-nitride semiconductors, such as GaN, AlN, A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/417H01L29/78
CPCH01L29/417H01L29/78H01L33/007H01L33/04H01L33/16H01L33/20H01L33/32H01L2933/0083H01L33/06
Inventor 格拉尔德·帕恩戈登·卡尔森斯特芬·韦斯特坎普
Owner TECH UNIV BERLIN