Channel current-enhanced transistors and power electronic device

Abstract

The invention discloses a channel current-enhanced transistor and a power electronic device. The channel current-enhanced transistor comprises a first semiconductor layer, a source region, a source metal layer, a channel region, a gate structure, a drift region, a drain metal layer and a light-emitting structure; the first semiconductor layer has a first conductivity type and is lightly doped; thesource region is formed in the first semiconductor layer, has a first conductivity type and is heavily doped; the source metal layer is formed on the source region; the channel region is formed in the first semiconductor layer and has a second conductivity type; the gate structure is formed on the channel region; the drift region is formed in the first semiconductor layer and is located outside the source region and the channel region; the drain metal layer is formed under the first semiconductor layer; and the light-emitting structure is formed on the drift region and is used for generatinglight for exciting electron-hole pairs in the first semiconductor layer. According to the channel current-enhanced transistor and the power electronic device of the invention, the light-emitting structure is disposed on the drift region, and therefore, the on-current of the device can be greatly improved through illumination with the off-state current of the device not affected.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a channel current enhanced transistor and a power electronic device. Background technique [0002] Gallium nitride (GaN) wide bandgap direct bandgap material has the advantages of high hardness, high thermal conductivity, high electron mobility, stable chemical properties, small dielectric constant and high temperature resistance, so GaN is used in light-emitting diodes, high It has a wide range of applications and great prospects in power electronic devices such as high frequency, high temperature, radiation resistance, and high voltage. [0003] So far, heterojunction high electron mobility transistors (HEMTs) based on GaN materials have been widely used and researched. However, normally-on HEMTs cannot meet the application requirements of low power consumption. Therefore, the research on the vertical double-diffused metal-oxide semiconductor fi...

AI Technical Summary

Problems solved by technology

However, for GaN materials, the activation of implanted ions requires a very high temperature, especially for Mg ions in the p-type channel, the activation rate is not high, which leads to a certain limitation of the conduction current of GaN-VDMOS and GaN-IGBT

Images