Photon-enhanced transistor and power electronic device

Abstract

The present invention discloses a photon-enhanced transistor and a power electronic device. The photon-enhanced transistor comprises a first semiconductor layer, a source region, a source metal layer,a channel region, a gate structure, a drain metal layer, isolation grooves and light-emitting structures; the first semiconductor layer has a first conductivity type and is lightly doped; the sourceregion is formed in the first semiconductor layer, has a first conductivity type and is heavily doped; the source metal layer is formed on the source region; the channel region is formed in the firstsemiconductor layer and has a second conductivity type; the gate structure is formed on the channel region; the drain metal layer is formed under the first semiconductor layer; the isolation grooves are formed around the source region; each light-emitting structure is formed in at least part of the corresponding isolation groove; and the light-emitting structures are used for generating light forexciting electron-hole pairs in the semiconductor layer. According to the photon-enhanced transistor and the power electronic device of the invention, the light-emitting structures are disposed in theisolation grooves around the source region, and therefore, the on-current of the device can be greatly improved through illumination with the off-state current of the device not affected.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a photon-enhanced transistor and a power electronic device. Background technique [0002] Gallium nitride (GaN) wide bandgap direct bandgap material has the advantages of high hardness, high thermal conductivity, high electron mobility, stable chemical properties, small dielectric constant and high temperature resistance, so GaN is used in light-emitting diodes, high It has a wide range of applications and great prospects in power electronic devices such as high frequency, high temperature, radiation resistance, and high voltage. [0003] So far, heterojunction high electron mobility transistors (HEMTs) based on GaN materials have been widely used and researched. However, normally-on HEMTs cannot meet the application requirements of low power consumption. Therefore, the research on the vertical double-diffused metal-oxide semiconductor field-effec...

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Problems solved by technology

However, for GaN materials, the activation of implanted ions requires a very high temperature, especially for Mg ions in the p-type channel, the activation rate is not high, which leads to a certain limitation of the conduction current of GaN-VDMOS and GaN-IGBT

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