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Photon enhanced field effect transistor and integrated circuit

A field-effect transistor and photon technology, which is applied in the direction of transistors, circuits, electrical components, etc., can solve the problems of GaN-MOSFET conduction current limitation and low activation rate, and achieve the effect of improving conduction current

Inactive Publication Date: 2018-06-29
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But for GaN materials, the activation of implanted ions requires a very high temperature, especially for the Mg ions of the p-type channel, the activation rate is not high, which leads to a certain limit on the conduction current of GaN-MOSFET

Method used

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  • Photon enhanced field effect transistor and integrated circuit
  • Photon enhanced field effect transistor and integrated circuit
  • Photon enhanced field effect transistor and integrated circuit

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Embodiment Construction

[0034] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0035] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the descrip...

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Abstract

The invention discloses a photon enhanced field effect transistor and an integrated circuit. The photon enhanced field effect transistor comprises a semiconductor layer, a source region and a drain region arranged in the semiconductor layer, a gate structure formed on the semiconductor layer, and a light emitting structure formed on the lower surface of the semiconductor layer, wherein the light emitting structure is used for generating photons to excite the electron-hole pairs in the semiconductor layer. According to the photon enhanced field effect transistor and the integrated circuit of the invention, as the light emitting structure is arranged on the lower surface of the first semiconductor layer, the break-over current of the device is greatly improved by light without affecting theoff-state current of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a photon-enhanced field-effect transistor and an integrated circuit. Background technique [0002] Gallium nitride (GaN) wide bandgap direct bandgap material has the advantages of high hardness, high thermal conductivity, high electron mobility, stable chemical properties, small dielectric constant and high temperature resistance, so GaN is used in light-emitting diodes, high It has a wide range of applications and great prospects in power electronic devices such as high frequency, high temperature, radiation resistance, and high voltage. [0003] So far, heterojunction high electron mobility transistors (HEMTs) based on GaN materials have been widely used and researched. However, normally-on HEMTs cannot meet the application requirements of low power consumption. Therefore, the research on metal oxide semiconductor field effect transistor (MOSFET...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15H01L29/78H01L29/80H01L29/808
CPCH01L27/15H01L29/78H01L29/785H01L29/802H01L29/808
Inventor 王敬陈文捷梁仁荣
Owner TSINGHUA UNIV