Optically-modulated field effect transistor and integrated circuit
A field effect transistor and light modulation technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of GaN-MOSFET on-current limitation and low activation rate, and achieve the effect of improving on-current
Inactive Publication Date: 2018-10-02
TSINGHUA UNIV
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But for GaN materials, the activation of implanted ions requires a very high temperature, especially for the Mg ions of the p-type channel, the activation rate is not high, which leads to a certain limit on the conduction current of GaN-MOSFET
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[0034] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.
[0035] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the descrip...
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The invention discloses an optically-modulated field effect transistor and an integrated circuit. The optically-modulated field effect transistor comprises a semiconductor layer, a source region, a drain region, a gate structure and a light-emitting structure; the source region is disposed in the semiconductor layer or on the semiconductor layer; the drain region is disposed in or on the semiconductor layer; the gate structure is formed on the semiconductor layer; the light-emitting structure is formed on the semiconductor layer; and the light-emitting structure is used for generating photonsto excite electron-hole pairs in the semiconductor layer. According to the optically-modulated field effect transistor and the integrated circuit of the invention adopted, the light-emitting structureis disposed on the semiconductor, and therefore, the on-current of the device can be greatly improved through illumination with the off-state current of the device not affected.
Description
technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a light modulation field effect transistor and an integrated circuit. Background technique [0002] Gallium nitride (GaN) wide bandgap direct bandgap material has the advantages of high hardness, high thermal conductivity, high electron mobility, stable chemical properties, small dielectric constant and high temperature resistance, so GaN is used in light-emitting diodes, high It has a wide range of applications and great prospects in power electronic devices such as high frequency, high temperature, radiation resistance, and high voltage. [0003] So far, heterojunction high electron mobility transistors (HEMTs) based on GaN materials have been widely used and researched. However, normally-on HEMTs cannot meet the application requirements of low power consumption. Therefore, the research on metal oxide semiconductor field effect transistor (MOSFE...
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IPC IPC(8): H01L29/772H01L29/78H01L27/15
CPCH01L27/15H01L29/772H01L29/78
Inventor 王敬陈文捷梁仁荣许军
Owner TSINGHUA UNIV