A method for realizing gradient doping of zinc oxide nanowire arrays
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A zinc oxide nanowire, gradient doping technology, applied in the direction of zinc oxide/zinc hydroxide, vacuum evaporation coating, coating, etc., can solve the problems of small space size of nanowires, and achieve the effect of reliable preparation
Active Publication Date: 2020-01-14
HUBEI UNIV
View PDF3 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
However, due to the very small spatial size of nanowires (usually 100nm), traditional doping processes cannot achieve gradient doping in nanoscale space.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0042] see Figure 1-7 , a method embodiment 1 of the present invention for realizing gradient doping of zinc oxide nanowire arrays, comprising the following steps:
[0043] (1) Select a 0.5×0.5 cm gallium nitride conductive substrate, ultrasonically clean it with ethanol, acetone and deionized water for about 10 minutes, and then dry it with dry nitrogen to prepare a deposition substrate.
[0044] (2) Evaporate a layer of gold film with a thickness of 5nm on the cleaned gallium nitride conductive substrate by using an electron beam evaporation coating apparatus, as a catalyst for the growth of zinc oxide nanowires.
[0045] (3) Weigh zinc oxide powder and carbon powder according to a mass ratio of 1:1, mix them and grind them evenly to make a mixed powder, the purity of the zinc oxide powder is ≥99.9%, then weigh 0.13g of the mixed powder as a reaction source and place it in a dual temperature zone At the closed end of the inner tube of the tube furnace, the deposited substr...
Embodiment 2
[0056] Embodiment 2 of a method for realizing gradient doping of zinc oxide nanowire arrays according to the present invention comprises the following steps:
[0057] (1) Select a 0.5×0.5 cm gallium nitride conductive substrate, ultrasonically clean it with ethanol, acetone and deionized water for about 10 minutes, and then dry it with dry nitrogen to prepare a deposition substrate.
[0058] (2) Evaporate a layer of gold film with a thickness of 5nm on the cleaned gallium nitride conductive substrate by using an electron beam evaporation coating apparatus, as a catalyst for the growth of zinc oxide nanowires.
[0059] (3) Weigh zinc oxide powder and carbon powder according to a mass ratio of 1:1, mix them and grind them evenly to make a mixed powder, the purity of the zinc oxide powder is ≥99.9%, then weigh 0.13g of the mixed powder as a reaction source and place it in a dual temperature zone At the closed end of the inner tube of the tube furnace, the deposited substrate coat...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Property
Measurement
Unit
length
aaaaa
aaaaa
Login to view more
Abstract
The invention discloses a method for achieving zinc oxide nanowire array gradient doping. The method includes: using a chemical vapor deposition method or a liquid-phase synthesis method to prepare apure zinc oxide nanowire array; depositing a doping source onto the pure zinc oxide nanowire array through vapor deposition to obtain a doped pure zinc oxide nanowire array, wherein vapor deposition time is smaller than 180 seconds, and the mass of the doping source is not larger than 0.1g; placing the doped pure zinc oxide nanowire array in a set high-temperature environment to allow the deposited doping source and zinc oxide to have solid-phase diffusion so as to achieve vertical gradient nanowire doping quantity distribution, wherein nanowire concentration gradient control is achieved by controlling high-temperature solid-phase diffusion time; placing into a tube furnace to perform annealing in an argon environment at 880-950 DEG C for 1-3 hours, and naturally cooling after the annealing. By the method, a gradient doped zinc oxide nanowire array can be reliably prepared, and the application range of zinc oxide nanowires in fields of electronic devices, electrical property regulationand luminescence property regulation.
Description
technical field [0001] The invention relates to a method for realizing gradient doping of zinc oxide nanowire arrays, belonging to the technical field of nanometer optoelectronic devices. Background technique [0002] Zinc oxide (ZnO) is a wide bandgap semiconductor material with piezoelectric properties, direct bandgap bandgap width (3.34eV), exciton binding energy up to 60meV, good radiation resistance, and good biocompatibility, etc. Advantages, it is widely used in the fields of short-wavelength ultraviolet light-emitting devices, piezoelectric optoelectronic devices, solar cells and photoelectric sensors. For example, in 2001, Yang et al. reported the study of ultraviolet lasers with zinc oxide nanowire arrays at room temperature, and there was a laser emission of less than 0.3nm broadening around 380nm. [1] . In 2006, Wang et al. reported the piezoelectric effect generator of zinc oxide nanowire arrays, which opened the upsurge of nano energy research. [2] . ZnO na...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more