Semiconductor structure and fabrication method thereof

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises: forming a nitrogen-containing compound layer on a substrate; performing a heat treatment process on the nitrogen-containing compound layer; forming a photoresist pattern layer, and the photoresist pattern layer exposing at least part of the nitrogen-containing compound layer. In the present invention, before forming a photoresist pattern layer, a heat treatment process is performed on the nitrogen-containing compound layer, the heat treatment process can destroy the activity of nitrogen bonds on the surface of the nitrogen-containing compound layer, so that during the formation of the photoresist pattern layer, the nitrogen-containing compound layer There will be no nitrogen bonds on the surface to react with air or hydrogen bonds in the cleaning process, thereby preventing the generation of adhesive residue. In this way, the CD of the semiconductor structure manufactured by the manufacturing method is stable, and has good product quality and performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In the field of semiconductor manufacturing, the photolithography process is an extremely critical step in the manufacturing method of semiconductor structures. Whether it can accurately move the corresponding pattern to the semiconductor substrate is one of the main factors that determine the performance and quality of semiconductor structures. Generally, the photolithography process includes several main steps such as glue coating, exposure, development and glue removal. Nowadays, with the development of continuous reduction in the size of semiconductor structures, the photolithography process will face more severe challenges, which have a key impact on the performance, quality and yield of semiconductor structures. [0003] However, in the photolithography process, photoresis...

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Problems solved by technology

[0003] However, in the photolithography process, photoresist residue often occurs, and the remaining photoresist will affect the critical dimension (CD) of the semiconductor structure.

For example: in the photolithography process of the Lightly Doped Drain (LDD) of the static random access memory unit (SRAMCell), there will be N-H bond reaction to form residual glue (Scum), in which the N bond comes from the polysilicon sidewall The silicon nitride sidewall, the H bond comes from the air or the cleaning process, and the residual glue will volatilize and decrease with time, causing the characteristic size (CD) of the LDD to be unstable, thus affecting the quality and performance of the SRAM

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