Low-temperature electronic interconnection material, preparation method thereof and low-temperature electronic interconnection method
An electronic interconnection and low-temperature technology, which is applied in the direction of circuits, electrical components, and electrical solid devices, can solve limitations and other problems, and achieve the effects of densification, low-temperature interconnection, and excellent low-temperature interconnection characteristics
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[0052] Example 1
[0053] This embodiment provides a method for preparing a dense-loose binary structure particle layer, which includes the following steps:
[0054] Using laser deposition technology, using high-purity silver targets, a dense particle layer is deposited on the surfaces to be connected. The process parameters used for deposition are: target base distance 37mm, laser average power 100W, deposition pressure 0.5Pa, and deposition time 20min. A dense silver particle layer with a thickness of 22 μm, a density of 90%, and an average particle size of 500 nm is obtained on the surface of the parts to be connected.
[0055] Then, the loose particle layer is deposited on the surface of the dense particle layer of the parts to be connected, and the process parameters used for deposition are: target base distance 50mm, laser average power 100W, deposition pressure 1400Pa, and deposition time 8min. Obtain an 80μm thick silver loose particle layer with a density of 60% and an aver...
Example Embodiment
[0056] Example 2
[0057] This embodiment provides a method for preparing a dense particle layer of silver, which includes the following steps:
[0058] Using laser deposition technology, using high-purity silver target material, a dense particle layer is deposited on the surface of the parts to be connected. The process parameters used for deposition are: target base distance 90mm, laser average power 15W, deposition pressure 10 -3 Pa, deposition time 30min. On the surface of the parts to be connected, a dense silver particle layer with a thickness of 5 μm, a density of 92%, and an average particle size of 120 nm is obtained. The surface morphology is as figure 2 Shown.
Example Embodiment
[0059] Example 3
[0060] This embodiment provides a method for preparing the silver loose particle layer, which includes the following steps:
[0061] Using laser deposition technology, using high-purity silver target material, the loose grain layer is deposited on the surface of the parts to be connected. The process parameters used for deposition are: target base distance 67mm, laser average power 25W, deposition pressure 1500Pa, deposition time 10min. A silver loose particle layer with a thickness of 10μm, a density of 35%, and an average particle size of 40nm is obtained on the surface of the part to be connected, and its surface morphology is as image 3 Shown.
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