Method for regenerating TiN process Ti material part of film fabrication of semiconductor 8-inch wafer manufacturing

A technology for semiconductors and parts, applied in the field of Ti material parts regeneration by TiN process, it can solve the problems of damage to the surface coating of parts, environmental pollution, etc. Effect

Inactive Publication Date: 2018-10-19
苏州珮凯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the former will pollute the environment, and the latt

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The method for regenerating Ti material components of the TiN process in the thin film manufacturing process of semiconductor 8-inch wafers comprises the following steps:

[0025] (1) Under normal pressure, heat pure water or ultrapure water to 75~95°C, pass hot water into the high-pressure water pump, connect the high-pressure water pump to the nozzle, and spray the hot water through the nozzle to the surface of the Ti material parts. Not less than 85 bar, treatment for 22 minutes; when hot water is sprayed on the surface of Ti material parts, the jet direction of hot water at the outlet of the nozzle is oblique to the surface of Ti material parts, and the angle formed between the jet direction of hot water at the nozzle outlet and the surface of Ti material parts The range is arctan0.035;

[0026] (2) Use hot air to dry Ti parts, and the temperature of the hot air should not be higher than 100°C;

[0027] (3) Under normal pressure, when the Ti material parts are natu...

Embodiment 2

[0030] The method for regenerating Ti material components of the TiN process in the thin film manufacturing process of semiconductor 8-inch wafers comprises the following steps:

[0031] (1) Under normal pressure, heat pure water or ultrapure water to 75~95°C, pass hot water into the high-pressure water pump, connect the high-pressure water pump to the nozzle, and spray the hot water through the nozzle to the surface of the Ti material parts. Not less than 165bar, treatment for 35 minutes; when hot water is sprayed on the surface of Ti material parts, the hot water injection direction at the nozzle outlet is at an oblique angle to the surface of Ti material parts, and the angle formed between the hot water injection direction at the nozzle outlet and the surface of Ti material parts The range is arctan0.1763;

[0032] (2) Use hot air to dry Ti parts, and the temperature of the hot air should not be higher than 100°C;

[0033] (3) Under normal pressure, when the Ti material pa...

Embodiment 3

[0036] The method for regenerating Ti material components of the TiN process in the thin film manufacturing process of semiconductor 8-inch wafers comprises the following steps:

[0037] (1) Under normal pressure, heat pure water or ultrapure water to 75~95°C, pass hot water into the high-pressure water pump, connect the high-pressure water pump to the nozzle, and spray the hot water through the nozzle to the surface of the Ti material parts. Not less than 110bar, treatment for 25min; when hot water is sprayed on the surface of Ti material parts, the hot water injection direction at the nozzle outlet is at an oblique angle to the surface of Ti material parts, and the angle formed between the hot water injection direction at the nozzle outlet and the surface of Ti material parts The range is arctan0.08;

[0038] (2) Use hot air to dry Ti parts, and the temperature of the hot air should not be higher than 100°C;

[0039] (3) Under normal pressure, when the Ti material parts are...

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Abstract

The invention discloses a method for regenerating a TiN process Ti material part of film fabrication of semiconductor 8-inch wafer manufacturing. The method comprises the following steps (1) under normal pressure, after pure water or ultra-pure water is heated, hot water is fed into a high-pressure water pump and us sprayed on all parts of the surface of the Ti material part, and the water pressure is not less than 85 bar; (2) the Ti material part is dried by using hot air; (3) under normal pressure, as natural cooling is carried out, a dry ice jetting machine is used, dry ice particles are sprayed to all parts of the Ti material parts at a high speed, and the jetting speed is 870-1000 m/s; and (4) after dry-ice jetting is finished, the temperature naturally returns to the room temperature, and then washing is carried out. According to the method, the steps are concise, but the processing effect is magical, an excellent impurity falling and cleaning effect can be obtained in a relatively short time, moreover, the water flushing pressure and the dry ice quenching are both in the titanium material bearing range, and therefore, the regeneration of the Ti material photoelectric part becomes simple and feasible.

Description

technical field [0001] The invention belongs to the technical field of photoelectric cleaning, in particular to a method for regenerating parts made of Ti material in the TiN process of the thin film manufacturing process of semiconductor 8-inch wafers. Background technique [0002] Components used in the field of semiconductor technology often have high requirements for cleanliness, and tiny impurities will affect the performance of semiconductors. As non-consumable core parts that can be used for a long time, it is impossible to replace them when they are still usable, and the cost is too high. Instead, cleaning and cleaning technologies are used to regenerate semiconductor parts, and the regenerated parts can be put into use repeatedly , basically no impact on performance. [0003] The traditional cleaning is organic chemical solvents or reagents to dissolve and post-treat organic residues; or use auxiliary high-pressure water blasting cleaning, etc. But the former will...

Claims

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Application Information

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IPC IPC(8): B08B3/02B08B7/00B08B5/02B08B13/00
CPCB08B3/02B08B5/02B08B7/00B08B13/00B08B2203/007
Inventor 范银波
Owner 苏州珮凯科技有限公司
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