Structure and formation method of interconnection structure of semiconductor device

Abstract

According to some embodiments, structures and formation methods of a semiconductor device structure are provided. A method includes depositing a first layer including Al atoms to cover a first dielectric layer in a first conductive feature. The method also includes depositing a second layer including N atoms over the first layer. The first layer and the second layer form an etch stop layer including aluminum nitride. The etch stop layer includes vacancies and has an atomic percentage of Al to Al and N. The method also includes filling the vacancies in the etch stop layer with additional N atoms to reduce the atomic percentage of Al to Al and N. In addition, the method includes forming a second dielectric layer over the etch stop layer. The method also includes forming a second conductive feature in the second dielectric layer and the etch stop layer to be connected to the first conductive feature.

Description

technical field [0001] Some embodiments of the present invention relate to a semiconductor device structure and its forming method, in particular to an interconnection structure of a semiconductor device and its forming method. Background technique [0002] The semiconductor integrated circuit (integrated circuit, IC) industry has experienced rapid growth. Technological advances in integrated circuit materials and design have resulted in generations of integrated circuits, each generation of circuits being smaller and more complex than the previous generation. [0003] During the development of integrated circuits, functional density (ie, the number of devices connected per unit wafer area) has generally increased while geometric size (ie, the smallest component that can be fabricated in a process) has decreased. The benefits of size reduction often include increased productivity and lower associated costs. [0004] However, the above developments have increased the comple...

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Problems solved by technology

Maintaining the reliability of semiconductor devices as semiconductor devices become smaller and smaller is a challenge in existing processes

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