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Antimony-doped high-performance gete-pbte solid solution thermoelectric material and preparation method thereof

A thermoelectric material and high-performance technology, applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of limited solid solubility of materials and achieve high thermoelectric performance

Active Publication Date: 2020-10-02
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The prepared material is limited by the solid solubility of PbTe in GeTe, and the dimensionless figure of merit ZT can only reach 1.58 at 400 °C

Method used

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  • Antimony-doped high-performance gete-pbte solid solution thermoelectric material and preparation method thereof
  • Antimony-doped high-performance gete-pbte solid solution thermoelectric material and preparation method thereof
  • Antimony-doped high-performance gete-pbte solid solution thermoelectric material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0042] A kind of GeTe-PbTe solid solution thermoelectric semiconductor material, its chemical formula is Ge 1-x-y Pb x Sb y Te, x=0.1-0.2, y=0-0.07. Get x=0.1,0.15,0.2 in the present embodiment (when x=0.1, chemical formula is Ge 0.9-y Pb 0.1 Sb y Te, when x=0.15, the chemical formula is Ge 0.85-y Pb 0.15 Sb y Te, when x=0.2, the chemical formula is Ge 0.8-y Pb 0.2 Sb y Te, that is, the range of PbTe is adjustable, and Sb doping is used to control the carrier concentration and optimize the thermoelectric performance under different components).

[0043] Different components of Ge can be obtained according to the following preparation methods 1-x-y Pb x Sb y Te bulk material:

[0044] (1) According to different values ​​of x and y, the chemical formula is Ge 1-x-y Pb x Sb y The stoichiometric ratio of Te (x=0.1~0.2, y=0~0.07) Weigh the elemental raw materials germanium Ge, antimony Sb, lead Pb and tellurium Te with a purity greater than 99.99%, place the raw ma...

Embodiment 2

[0054] Different from Embodiment 1, the value of x in this embodiment is 0.25.

Embodiment 3

[0056] The difference from Example 1 is that in the step (2) of this example, the temperature is slowly raised to 950° C. at a rate of 150° C. per hour, and kept at a temperature of 10 hours, followed by rapid quenching and cooling to obtain the first ingot.

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Abstract

The invention relates to an antimony-doped high-performance GeTe-PbTe solid solution thermoelectric material and a preparation method thereof, the chemical formula of which is Ge 1‑x‑ y Pb x Sb y Te, x=0~0.4, y=0~0.07; the preparation method of the thermoelectric material is: according to the stoichiometric ratio in the above chemical formula, high-purity (99.99%) elemental elements Ge, Sb, Pb, Te are vacuum encapsulated, After high-temperature melting and annealing heat treatment, it is ground into powder, and then vacuum hot-pressed and sintered to rapidly cool down. Compared with the prior art, due to the doping of Sb in the thermoelectric material prepared by the present invention, the solubility of PbTe in the solid solution of GeTe-PbTe has been greatly improved, which can make PbTe in a large solid solution range. High thermoelectric figure of merit.

Description

technical field [0001] The invention belongs to the technical field of new energy materials, and relates to an antimony-doped high-performance GeTe-PbTe solid solution thermoelectric material and a preparation method thereof. Background technique [0002] Clean energy is the driving force for the sustainable development of society. Based on the Seebeck effect, thermoelectric technology uses temperature difference to drive the directional migration of carriers inside the material to directly convert waste heat into electrical energy. It has the characteristics of no pollution and no noise, and is indispensable for future social development. one of the energy technologies. [0003] The energy conversion efficiency of thermoelectric materials is usually measured by the dimensionless thermoelectric figure of merit, zT, zT=S 2 σT / κ, where: T is the absolute temperature, S is the Seebeck coefficient; σ is the electrical conductivity; κ is the thermal conductivity, determined by t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 裴艳中李文李娟
Owner TONGJI UNIV
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