A miniaturized high temperature resistant high dynamic pressure sensor

A pressure sensor, high dynamic technology, applied in the direction of measuring fluid pressure, measuring fluid pressure through electromagnetic components, instruments, etc., can solve the problems of blockade and high cost of sensors, achieve inhibition of element diffusion, excellent resistance to thermoplastic deformation, and solve high temperature failure. Effect

Active Publication Date: 2020-08-14
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these sensors are expensive and impose a technical blockade on our country

Method used

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  • A miniaturized high temperature resistant high dynamic pressure sensor
  • A miniaturized high temperature resistant high dynamic pressure sensor
  • A miniaturized high temperature resistant high dynamic pressure sensor

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Embodiment Construction

[0025] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0026] refer to figure 1 and figure 2 , a miniaturized high temperature resistant high dynamic pressure sensor 1, including a sensor probe 2, a sensor chip 4 is installed inside the sensor probe 2, the sensor chip 4 is fixed in the sensor probe 2 through a high temperature resistant ceramic glue 5, and the sensor probe 2 is connected with The metal tungsten wire 3 passes through the sealing plate 6, and the sealing plate 6 and the sensor probe 2 are connected together. The diameter of the packaged sensor 1 is 6 mm, and the length from the front end of the probe 2 to the rear end of the sealing plate 6 is 10 mm. The sealing plate 6 is in the shape of a round cake, and there are four tungsten wire pin through holes 9 in the sealing plate 6 , and the rear end surface of the sealing plate 6 has a rounded corner structure 23 .

[0027] The mate...

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PUM

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Abstract

A miniaturized heat-resistant and high-dynamic pressure sensor comprises a sensor probe which is internally provided with a sensor chip, the sensor chip is fixed through a heat-resistant ceramic adhesive, the sensor probe is connected with a metal tungsten filament which passes through a seal plate, and the seal plate is connected with the sensor probe; the front end face of the sensor probe is provided with a pressure guidance hole which communicates with a pressure channel and a square sensor chip in the sensor probe, the rear end of the sensor chip installation groove is provided with a sensor vacuum chamber, and the side wall of the sensor probe is internally provided with a the metal tungsten filament taken as a lead terminal of the pressure sensor; the sensor chip is square-shaped, four sensitive resistors are arranged at the front surface of the sensor chip in the same direction, the back surface of the sensor chip is a square cavity corresponding to a square sensitive film, andthe pressure is applied to the square sensitive film through the pressure guidance hole. The miniaturized heat-resistant and high-dynamic pressure sensor is small in volume, resistant to heat and fast in response, and can be used for measurement of the total pressure and the static pressure.

Description

technical field [0001] The invention relates to the technical field of pressure sensors, in particular to a miniaturized high-temperature-resistant high-dynamic pressure sensor. Background technique [0002] Sensor technology is one of the important symbols of the level of national economic development, among which pressure sensors are currently the most widely used category. The development of semiconductor technology has led to the gradual replacement of traditional pressure sensors based on mechanical structures by miniaturized pressure sensors based on semiconductor silicon materials. Silicon micro pressure sensors have the characteristics of small size, high precision and integration. Scholars at home and abroad have carried out research on pressure sensors based on semiconductor polysilicon, single crystal silicon, silicon-on-insulator, silicon-on-sapphire, and diamond-on-silicon thin films. With the expansion of the scope of application and research, special pressure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L9/00G01L19/06G01L19/14
CPCG01L9/0051G01L9/0054G01L19/0627G01L19/0681G01L19/141G01L2009/0067G01L2009/0069
Inventor 赵友赵玉龙李村杨鑫婉
Owner XI AN JIAOTONG UNIV
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