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Data reading method, memory control circuit unit and memory storage device

A data reading and control circuit technology, applied in the field of data reading, can solve the problems of accelerating random reading speed and poor multi-plane reading operation effect

Inactive Publication Date: 2018-12-07
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to this limitation, the memory controller cannot use multi-plane read operations to speed up random reads, so that the effect of multi-plane read operations is very poor

Method used

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  • Data reading method, memory control circuit unit and memory storage device
  • Data reading method, memory control circuit unit and memory storage device
  • Data reading method, memory control circuit unit and memory storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0105] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit unit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0106] figure 1 is a schematic diagram of a host system, memory storage devices, and input / output (I / O) devices shown in accordance with an example embodiment, and figure 2 is a schematic diagram showing a host system, a memory storage device, and an input / output (I / O) device according to another exemplary embodiment.

[0107] Please refer to figure 1 and figure 2 , the host system 11 generally includes a processor 111 , a random access memory (random access memory, RAM) 112 , a read only memory (read only memory, ROM) 113 and a data transmission interface 114 . The processor 111 , random access memory 112 , ROM 113 and data transmi...

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PUM

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Abstract

The invention provides a data reading method for a rewritable non-volatile memory module. The data reading method comprises the steps of receiving a read instruction used for indicating to read data from a plurality of logical addresses; selecting a plurality of selected logical addresses conforming to preset conditions in the logical addresses, wherein the selected logical addresses comprise a first logical address mapped to a first entity programming unit and a second logical address mapped to a second entity programming unit, wherein the preset conditions comprise that the first entity programming unit belongs to a first plane, the second entity programming unit belongs to the second plane, the first plane and the second plane are different and belong to the same die, and the first address index value of the first entity programming unit is different from the second address index value of the second entity programming unit; and reading data belonging to the selected logical addresses in parallel. The invention further provides a memory control circuit unit and a memory storage device.

Description

technical field [0001] The invention relates to a data reading method, in particular to a data reading method of a rewritable non-volatile memory module, a memory control circuit unit and a memory storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones and MP3 players in recent years has led to a rapid increase in consumer demand for storage media. Because the rewritable non-volatile memory module (rewritable non-volatile memory module) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., it is very suitable as a variety of portable electronic devices. The storage medium of the product is set in various portable electronic products. [0003] Generally speaking, in a storage device configured with rewritable nonvolatile memory modules having multiple dies or multiple planes, the memory controller can use multi-plane memory Fetch operations to speed up data...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02G06F3/06
CPCG06F12/0238G06F3/0658G06F3/0679
Inventor 叶志刚
Owner PHISON ELECTRONICS