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Function integrated edge modulation IGBT/MOS driving system

A drive system and edge technology, applied in the field of power electronics, can solve the problems of large volume, difficult decoupling of magnetic circuits, complex systems, etc., and achieve the effects of easy implementation, low price, and simple circuit

Active Publication Date: 2018-12-07
武昌首义学院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (1) Too many auxiliary power supplies make the system complex;
[0007] (2) Technical problems of frequency and duty cycle of pulse transformer isolation transmission control signal
[0010] The pulse transformer designed for pulse width and pulse frequency has the problem of limited signal transmission; at the same time, the signal transmitted through the pulse transformer will cause delay and distortion, which requires a shaping circuit. Generally, the shaping circuit needs an additional auxiliary power supply with isolation. For A single-tube drive requires two magnetic components, which has the problem of complex structure and large volume of the drive system
Double-edge modulation technology can be used to solve the former problem, but it has the problem of edge identification; the number of magnetic components can be reduced through magnetic circuit integration, but it has the problem of magnetic circuit decoupling

Method used

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  • Function integrated edge modulation IGBT/MOS driving system
  • Function integrated edge modulation IGBT/MOS driving system
  • Function integrated edge modulation IGBT/MOS driving system

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Embodiment Construction

[0049] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0050] Such as figure 1 As shown, the function-integrated edge-modulated IGBT / MOS driving system provided by the embodiment of the present invention includes:

[0051] Control signal edge modulation module 1; control signal isolation and demodulation module 2; auxiliary power generation and isolation transmission module 3; auxiliary power isolation and signal isolation integration technology module 4.

[0052] The edge modulation module 1 of the control signal; it is used to use conventional logic gates and their differential circuits to modulate the rising / falling edge of the control signal, and modulate the rising edge ...

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Abstract

The invention belongs to the field of power electronics, and discloses a function integrated edge modulation IGBT / MOS driving system and method. The function integrated edge modulation IGBT / MOS driving system comprises: an edge modulation module of control signals; an isolation and demodulation module of control signals; an auxiliary power supply generation and isolation transmission module; and an auxiliary power supply isolation and signal isolation integrated technology module. The function integrated edge modulation IGBT / MOS driving system disclosed by the invention realizes the isolationtransmission of the control signals at 0 HZ to 1MHz at a duty ratio of 0% to 100% through the double-edge modulation and demodulation technology; and meanwhile, by means of the magnetic circuit integration technology, the integrated transmission of the auxiliary power supply and the control signals is realized, the circuit is simple, the price is low, and the implementation is easy.

Description

technical field [0001] The invention belongs to the technical field of power electronics, in particular to a function-integrated edge modulation IGBT / MOS drive system. Background technique [0002] At present, the existing technologies commonly used in the industry are as follows: [0003] Isolation drive is an important part of the secondary development and application of power switching devices, and it is an important guarantee for the safe operation of power switching devices. For a long time, the drive circuit has been plagued by two major problems. One is that there are too many auxiliary power supplies, which makes the system complex; the other is the technical problem of pulse transformer isolation and transmission control signal frequency and duty cycle limitation. After the third-generation semiconductor power switching devices gradually enter the application market, the topology of the converter is developing towards integration and simplification, and the problem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567H03K17/687
CPCH03K17/567H03K17/687H03K2217/0081
Inventor 朱忠尼宋庆国汪家荣
Owner 武昌首义学院