Method and apparatus for preparing oxide semiconductor layer
A technology for oxide semiconductors and preparation devices, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, coatings, etc., can solve problems such as poor display effects of display panels, slow down uneven display brightness, improve display effects, reduce The effect of the difference in conduction current
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[0046] figure 2 A flowchart of a method for preparing an oxide semiconductor layer provided in an embodiment of the present invention, such as figure 2 As shown, the preparation method of the oxide semiconductor layer may include:
[0047] Step 201, forming an oxide semiconductor layer on a substrate.
[0048]Step 202: When the oxide semiconductor layer includes multiple regions with different thicknesses, apply oxygen ions to the oxide semiconductor layer, so that the oxygen content in the multiple regions of the oxide semiconductor layer is positively correlated with the thickness of the oxide semiconductor layer.
[0049] To sum up, in the method for preparing the oxide semiconductor layer provided in the embodiment of the present invention, in the process of forming the oxide semiconductor layer on the substrate, since the oxide semiconductor layer includes multiple regions with different thicknesses, the multiple In a region, the conduction current of the region is po...
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