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Method and apparatus for preparing oxide semiconductor layer

A technology for oxide semiconductors and preparation devices, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, coatings, etc., can solve problems such as poor display effects of display panels, slow down uneven display brightness, improve display effects, reduce The effect of the difference in conduction current

Inactive Publication Date: 2018-12-11
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application provides a method and device for preparing an oxide semiconductor layer, which can solve the problem of poor display effect of display panels in the related art. The technical solution is as follows:

Method used

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  • Method and apparatus for preparing oxide semiconductor layer
  • Method and apparatus for preparing oxide semiconductor layer
  • Method and apparatus for preparing oxide semiconductor layer

Examples

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preparation example Construction

[0046] figure 2 A flowchart of a method for preparing an oxide semiconductor layer provided in an embodiment of the present invention, such as figure 2 As shown, the preparation method of the oxide semiconductor layer may include:

[0047] Step 201, forming an oxide semiconductor layer on a substrate.

[0048]Step 202: When the oxide semiconductor layer includes multiple regions with different thicknesses, apply oxygen ions to the oxide semiconductor layer, so that the oxygen content in the multiple regions of the oxide semiconductor layer is positively correlated with the thickness of the oxide semiconductor layer.

[0049] To sum up, in the method for preparing the oxide semiconductor layer provided in the embodiment of the present invention, in the process of forming the oxide semiconductor layer on the substrate, since the oxide semiconductor layer includes multiple regions with different thicknesses, the multiple In a region, the conduction current of the region is po...

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PUM

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Abstract

The invention provides a method and apparatus for preparing annoxide semiconductor layer, belonging to the technical field of display. The method comprises: forming an oxide semiconductor layer on a substrate; When the oxide semiconductor layer includes a plurality of regions having different thicknesses, oxygen ions are applied to the oxide semiconductor layer such that an oxygen content in the plurality of regions of the oxide semiconductor layer is positively correlated with a thickness of the oxide semiconductor layer. The invention solves the problem that the display effect of the displaypanel is poor due to the poor thickness uniformity of the oxide semiconductor layer. The present invention is used for preparing an oxide semiconductor layer.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method and device for preparing an oxide semiconductor layer. Background technique [0002] With the development of science and technology, the application of the display panel is more and more extensive. The display panel includes a substrate and a plurality of pixel units arranged on the substrate. The pixel unit usually includes an oxide semiconductor layer. [0003] In the process of preparing the oxide semiconductor layer, it is necessary to place multiple targets for forming the oxide semiconductor layer facing the substrate, and to pass charged particles to one side of the multiple targets, and to apply The orthogonal electromagnetic field makes the charged particles bombard the target under the action of the orthogonal electromagnetic field, so that part of the material on the target is knocked out and sputtered onto the substrate to obtain an oxide semiconductor layer...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/67H01L29/786
CPCH01L21/02565H01L21/02631H01L21/02664H01L21/67011H01L29/7869C23C14/086C23C14/35C23C14/5853H01L21/02587H01L27/1225H01L27/1285H01L29/66969C23C16/407C23C16/56H01L29/24
Inventor 苏同上王东方刘军王庆贺傅武霞闫梁臣袁广才
Owner BOE TECH GRP CO LTD
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