Ta sputtering target and method for producing the same

a sputtering target and sputtering technology, applied in the direction of sputtering coating, vacuum evaporation coating, coating, etc., can solve the problems of insufficient methods, insufficient uniform crystalline microstructure of the billet (slab), and insufficient ta sputtering target, so as to improve the uniform crystalline microstructure of the billet without lowering the yield
US20070240795A1Inactive Publication Date: 2007-10-18ULVAC INC
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
ULVAC INC
Publication Date
2007-10-18
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method for producing a Ta sputtering target including the following steps: (a) a step of forging a Ta ingot, comprising subjecting the Ta ingot to a forging pattern over at least 3 times, wherein each forging pattern is “a cold forging step comprising stamp-forging and upset-forging operations alternatively repeated over at least 3 times; (b) an in-process vacuum heat-treating step carried out between every successive two forging patterns to thus prepare a Ta billet; (c) a step of rolling the Ta billet to obtain a rolled plate; and (d) a step of vacuum heat-treating the rolled plate to obtain a Ta sputtering target. A sputtering target produced by the above method.
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Description

TECHNICAL FIELD

[0001] The present invention relates to a sputtering target which is subjected to a sputtering processing which is a thin film forming technique, and to a method for the production thereof and, more particularly, to a Ta sputtering target having a uniform crystalline microstructure and a method for the production of the same.BACKGROUND ART

[0002] Up to now, in the field of semiconductors, a barrier metal film layer has been formed. Such a barrier metal film layer has conventionally been formed, in the form of a thin film between a wiring films and insulating films. Such a barrier metal film layer has conventionally been formed in the form of a thin film according to, for instance, the sputtering technique. It has therefore been required for the barrier metal film layer to be formed with a thinner and more uniform thickness. For this reason, it has correspondingly been required for the sputtering target used for forming a barrier metal film layer to make the grain size of...

Claims

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