Ta sputtering target and method for producing the same

a sputtering target and sputtering technology, applied in the direction of sputtering coating, vacuum evaporation coating, coating, etc., can solve the problems of insufficient methods, insufficient uniform crystalline microstructure of the billet (slab), and insufficient ta sputtering target, so as to improve the uniform crystalline microstructure of the billet without lowering the yield

a sputtering target and sputtering technology, applied in the direction of sputtering coating, vacuum evaporation coating, coating, etc., can solve the problems of insufficient methods, insufficient uniform crystalline microstructure of the billet (slab), and insufficient ta sputtering target, so as to improve the uniform crystalline microstructure of the billet without lowering the yield

US20070240795A1Inactive Publication Date: 2007-10-18ULVAC INC

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  • Ta sputtering target and method for producing the same
  • Ta sputtering target and method for producing the same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0036]First, a Ta ingot having a size of 140 mmφ×200 mmL was subjected to stamp-forging and upset-forging operations alternatively repeated 3 times to thus obtain a primary forged billet, and then the latter was subjected to vacuum heat treatment (not more than 1.3×10−2 Pa; 1050° C.). The resulting primary forged billet was then subjected to the same procedures used in the primary forging step to thus prepare a secondary forged billet. Then the secondary forged billet was subjected to the same vacuum heat treatment used above and thereafter, it was further subjected to a third forging step according to the same procedures used above. The surface of the resulting tertiary forged billet was processed (working with a lathe) to thus remove any defect such as surface defects, cracks and / or fogging or protective covering, then subjected to a cold rolling operation in 4 axial directions at a total draft percentage of 70%. The resulting rolled plate was subjected to a vacuum heat treatment ...

example 2

[0037]The surface-processed tertiary forged billet prepared according to the method described in Example 1 was subjected to a cold rolling operation in 6 axial directions at a total draft percentage of 70%. The resulting rolled plate was subjected to a vacuum heat treatment at 880° C. As a result, it was found that the average grain size on the whole surface of the resulting sputtering target fell within the range from 29 to 36 μm and that the standard deviation of the grain size thereof was found to be 17 μm.

example 3

[0038]The surface-processed tertiary forged billet prepared according to the method described in Example 1 was subjected to a cold rolling operation in 8 axial directions at a total draft percentage of 72% and the resulting rolled plate was subjected to a vacuum heat treatment at 900° C. As a result, it was found that the average grain size on the whole surface of the resulting sputtering target fell within the range from 36 to 42 μm and that the standard deviation of the grain size thereof was found to be 19 μm.

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Abstract

A method for producing a Ta sputtering target including the following steps: (a) a step of forging a Ta ingot, comprising subjecting the Ta ingot to a forging pattern over at least 3 times, wherein each forging pattern is “a cold forging step comprising stamp-forging and upset-forging operations alternatively repeated over at least 3 times; (b) an in-process vacuum heat-treating step carried out between every successive two forging patterns to thus prepare a Ta billet; (c) a step of rolling the Ta billet to obtain a rolled plate; and (d) a step of vacuum heat-treating the rolled plate to obtain a Ta sputtering target. A sputtering target produced by the above method.

Description

TECHNICAL FIELD[0001]The present invention relates to a sputtering target which is subjected to a sputtering processing which is a thin film forming technique, and to a method for the production thereof and, more particularly, to a Ta sputtering target having a uniform crystalline microstructure and a method for the production of the same.BACKGROUND ART[0002]Up to now, in the field of semiconductors, a barrier metal film layer has been formed. Such a barrier metal film layer has conventionally been formed, in the form of a thin film between a wiring films and insulating films. Such a barrier metal film layer has conventionally been formed in the form of a thin film according to, for instance, the sputtering technique. It has therefore been required for the barrier metal film layer to be formed with a thinner and more uniform thickness. For this reason, it has correspondingly been required for the sputtering target used for forming a barrier metal film layer to make the grain size of...

Claims

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Application Information

Patent Timeline
18 Oct 2007
Publication
US20070240795A1
IPC
C22F1/18
CPC
C22F1/18; C23C14/3414
Inventors
SATO, MOTONORI; KIM, POONG