Multi-sampling CMOS image sensor pixel structure and ultra-high speed image acquisition method thereof

Abstract

The invention provides a pixel structure of a multi-sampling CMOS image sensor and an ultra-high speed image acquisition method thereof in order to solve the technical problems of high cost, poor imaging performance and complex process when the ultra-high speed imaging capability of the CMOS image sensor in tens of nanoseconds level is realized by adopting the prior art. Each pixel structure comprises a photodiode; the n output ports of the photodiode are all connected with a control switch tube; at the output end of each control switch tube, a floating diffusion region capacitor is connected;n floating diffusion region capacitors share a control transistor circuit; a charge output strobe switch is arranged between each floating diffusion region capacitor and the control transistor circuit; n >= 2. The frame interval between the multi-frame buffered images is determined by the transfer time of the image signal from the photodiode to the capacitance of the floating diffusion region. Under the modern CMOS technology, the transfer time can reach the order of hundreds of nanoseconds, and the ultra-high-speed continuous multi-frame imaging under the condition of hundreds of nanosecondstime resolution of the CMOS image sensor can be realized.

Description

technical field [0001] The invention relates to the fields of high-speed imaging and optical image sensors, in particular to a multi-sampling CMOS image sensor pixel structure and an ultra-high-speed image acquisition method thereof. Background technique [0002] Ultra-high-speed imaging systems can acquire transient images of microsecond or even nanosecond ultrafast reaction processes, which is of great significance to the mechanism research of ultrafast processes, and the image sensor chip plays a key role as the core device of the imaging system. [0003] There are two main types of traditional image sensors: CCD image sensors and CMOS image sensors. Compared with CCD image sensors, CMOS image sensors have the advantages of low cost, low power consumption, low development difficulty, and various analog or digital circuits can be integrated on-chip. With the continuous advancement of modern CMOS technology, CMOS image sensors have developed into Mainstream image sensor on...

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Problems solved by technology

[0006] In order to solve the technical problems of high cost, poor imaging performance and complicated process when the ultra-high-speed imaging capability of tens of nanoseconds of the CMOS image sensor is realized by using the existing technology, the present invention provides a multi-sampling CMOS image sensor pixel structure And its ultra-high-speed image acquisition method

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