Multi-sampling CMOS image sensor pixel structure and ultra-high speed image acquisition method thereof

A technology of image sensor and pixel structure, which is applied in image communication, electrical components, television, etc., can solve the problems of poor imaging performance, complex process, high cost, etc., and achieve the goal of small process change, low implementation difficulty, and reduced development cost Effect

Inactive Publication Date: 2018-12-18
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

[0006] In order to solve the technical problems of high cost, poor imaging performance and complicated process when the ultra-high-speed imaging capability of tens of nanoseconds of the CMOS

Method used

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  • Multi-sampling CMOS image sensor pixel structure and ultra-high speed image acquisition method thereof
  • Multi-sampling CMOS image sensor pixel structure and ultra-high speed image acquisition method thereof
  • Multi-sampling CMOS image sensor pixel structure and ultra-high speed image acquisition method thereof

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Example Embodiment

[0036] The pixel structure of the multi-sampling CMOS image sensor provided by the present invention is compatible with figure 1 The difference in the pixel structure of the traditional CMOS image sensor shown is that a photodiode of the present invention is connected to multiple control switch tubes and multiple floating diffusion capacitors, and the image signal generated by the photodiode can be sampled and buffered in time to obtain Multiple high time resolution image data.

[0037] The following takes a four-port sampling CMOS image sensor pixel structure model as an example to describe the present invention in detail:

[0038] Such as figure 2 As shown, four gate valves are evenly distributed around the photodiode, and each gate valve is connected to a floating diffusion capacitor. The four floating diffusion capacitors share a control transistor circuit, which is controlled by four charge output gate switches. The time-sharing transmission of the floating diffusion area cap...

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Abstract

The invention provides a pixel structure of a multi-sampling CMOS image sensor and an ultra-high speed image acquisition method thereof in order to solve the technical problems of high cost, poor imaging performance and complex process when the ultra-high speed imaging capability of the CMOS image sensor in tens of nanoseconds level is realized by adopting the prior art. Each pixel structure comprises a photodiode; the n output ports of the photodiode are all connected with a control switch tube; at the output end of each control switch tube, a floating diffusion region capacitor is connected;n floating diffusion region capacitors share a control transistor circuit; a charge output strobe switch is arranged between each floating diffusion region capacitor and the control transistor circuit; n >= 2. The frame interval between the multi-frame buffered images is determined by the transfer time of the image signal from the photodiode to the capacitance of the floating diffusion region. Under the modern CMOS technology, the transfer time can reach the order of hundreds of nanoseconds, and the ultra-high-speed continuous multi-frame imaging under the condition of hundreds of nanosecondstime resolution of the CMOS image sensor can be realized.

Description

technical field [0001] The invention relates to the fields of high-speed imaging and optical image sensors, in particular to a multi-sampling CMOS image sensor pixel structure and an ultra-high-speed image acquisition method thereof. Background technique [0002] Ultra-high-speed imaging systems can acquire transient images of microsecond or even nanosecond ultrafast reaction processes, which is of great significance to the mechanism research of ultrafast processes, and the image sensor chip plays a key role as the core device of the imaging system. [0003] There are two main types of traditional image sensors: CCD image sensors and CMOS image sensors. Compared with CCD image sensors, CMOS image sensors have the advantages of low cost, low power consumption, low development difficulty, and various analog or digital circuits can be integrated on-chip. With the continuous advancement of modern CMOS technology, CMOS image sensors have developed into Mainstream image sensor on...

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Application Information

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IPC IPC(8): H04N5/3745H04N5/378
CPCH04N25/77H04N25/75
Inventor 杨少华刘璐严明郭明安李刚李斌康
Owner NORTHWEST INST OF NUCLEAR TECH
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