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Bonded body, power module substrate, bonded body manufacturing method, and power module substrate manufacturing method

A manufacturing method and technology for power modules, which are applied in the manufacturing of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of increased thermal stress, insufficient bonding, and high thermal resistance of ceramic substrates, so as to ensure the bonding strength, Effective cooling effect

Active Publication Date: 2018-12-21
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Since the intermetallic compound formed near the ceramic substrate is relatively hard, there is a problem that when a thermal cycle load is applied to the substrate for a power module, the thermal stress generated on the ceramic substrate increases, and cracks tend to occur on the ceramic substrate.
Therefore, the thermal resistance in the stacking direction becomes high, and it may not be possible to dissipate heat efficiently.
[0016] Furthermore, in the power module substrate described in Patent Document 3, a Cu—Sn layer and an intermetallic compound layer containing P and Ti are formed between the ceramic substrate and a circuit layer made of Cu or Cu alloy, but the use environment When the temperature becomes higher, cracks may occur starting from the intermetallic compound layer containing P and Ti, and the bonding may become insufficient

Method used

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  • Bonded body, power module substrate, bonded body manufacturing method, and power module substrate manufacturing method
  • Bonded body, power module substrate, bonded body manufacturing method, and power module substrate manufacturing method
  • Bonded body, power module substrate, bonded body manufacturing method, and power module substrate manufacturing method

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no. 1 approach

[0069] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, a first embodiment of the present invention will be described.

[0070]The bonded body according to the present embodiment is a power module substrate 10 in which a ceramic substrate 11 which is a ceramic component and a Cu plate 22 (circuit layer 12 ) which is a Cu component are bonded. figure 1 A power module 1 including a power module substrate 10 according to the present embodiment is shown.

[0071] The power module 1 includes: a power module substrate 10 provided with a circuit layer 12; figure 1 The upper surface in the middle) is the semiconductor element 3 bonded through the bonding layer 2 .

[0072] Such as figure 2 As shown, the power module substrate 10 includes: a ceramic substrate 11; and one surface of the ceramic substrate 11 ( figure 2 The middle is the upper surface) circuit layer 12.

[0073] The ceramic substrate 11 is made of AlN (alumi...

no. 2 approach

[0118] Next, a second embodiment of the present invention will be described. In addition, the same code|symbol is attached|subjected to the same structure as 1st Embodiment, and detailed description is abbreviate|omitted.

[0119] Image 6 A power module 101 including a power module substrate 110 according to the second embodiment is shown in .

[0120] This power module 101 includes: a power module substrate 110 provided with a circuit layer 112 and a metal layer 113; Image 6 The middle is the upper surface) the semiconductor element 3 bonded through the bonding layer 2; and disposed on the other side of the metal layer 113 ( Image 6 Middle is the radiator 130 on the lower side).

[0121] Such as Figure 7 As shown, the power module substrate 110 includes: a ceramic substrate 11; Figure 7 The circuit layer 112 is the upper surface in the middle; and the other surface ( Figure 7 The middle is the metal layer 113 of the lower surface).

[0122] The ceramic substrate ...

no. 3 approach

[0158] Next, a third embodiment of the present invention will be described. In addition, the same code|symbol is attached|subjected to the same structure as 1st Embodiment, and detailed description is abbreviate|omitted.

[0159] Figure 11 A power module 201 including the power module substrate 210 according to the third embodiment is shown in FIG.

[0160] The power module 201 includes: a power module substrate 210 provided with a circuit layer 212 and a metal layer 213; Figure 11 The upper surface in the center) the semiconductor element 3 bonded through the bonding layer 2; and the other side of the power module substrate 210 ( Figure 11 Middle is the radiator 230 on the lower side).

[0161] Such as Figure 12 As shown, the power module substrate 210 includes: a ceramic substrate 11; Figure 12 The circuit layer 212 is the upper surface in the middle; and the other surface of the ceramic substrate 11 ( Figure 12 The middle is the metal layer 213 of the lower surf...

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Abstract

The bonded body comprises a ceramic member formed from a ceramic and a Cu member formed from Cu or a Cu alloy. The following layers are formed on the bonding interface between the ceramic member and the Cu member: a Cu-Sn layer positioned on the Cu member side and comprising a solid solution of Sn in Cu, a first intermetallic compound layer positioned on the Cu member side and containing Cu and Ti, and a second intermetallic compound layer positioned between the first intermetallic compound layer and the Cu-Sn layer and containing P and Ti.

Description

technical field [0001] The present invention relates to a joined body in which a ceramic member and a Cu member are joined, and a substrate for a power module in which a Cu plate made of Cu or a Cu alloy is joined to a ceramic substrate. [0002] This application claims priority based on Patent Application No. 2016-010675 filed in Japan on January 22, 2016 and Patent Application No. 2017-000381 filed in Japan on January 5, 2017, and the contents thereof are incorporated herein. Background technique [0003] A semiconductor device such as an LED or a power module has a structure in which a semiconductor element is bonded to a circuit layer made of a conductive material. [0004] Power semiconductor elements for large power control, which are used to control wind power generation, electric vehicles, etc., have a large amount of heat generated. Therefore, as substrates for mounting such power semiconductor elements, for example, AlN (aluminum nitride) has been widely used. ) a...

Claims

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Application Information

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IPC IPC(8): H01L23/13H01L23/14H01L23/36
CPCH01L23/13H01L23/14H01L23/36C04B35/645C04B37/026C04B2235/6562C04B2235/6567C04B2235/6581C04B2235/661C04B2237/122C04B2237/124C04B2237/126C04B2237/343C04B2237/366C04B2237/368C04B2237/407C04B2237/704C04B2237/706C04B2237/708C04B2237/72H01L23/3735H01L2224/32225C22C9/02H01L23/142H01L23/15H01L23/3731H01L23/3736H01L23/53228F28F3/12F28F21/085H01L21/4882
Inventor 寺崎伸幸长友义幸
Owner MITSUBISHI MATERIALS CORP