Bonded body, power module substrate, bonded body manufacturing method, and power module substrate manufacturing method
A manufacturing method and technology for power modules, which are applied in the manufacturing of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of increased thermal stress, insufficient bonding, and high thermal resistance of ceramic substrates, so as to ensure the bonding strength, Effective cooling effect
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no. 1 approach
[0069] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, a first embodiment of the present invention will be described.
[0070]The bonded body according to the present embodiment is a power module substrate 10 in which a ceramic substrate 11 which is a ceramic component and a Cu plate 22 (circuit layer 12 ) which is a Cu component are bonded. figure 1 A power module 1 including a power module substrate 10 according to the present embodiment is shown.
[0071] The power module 1 includes: a power module substrate 10 provided with a circuit layer 12; figure 1 The upper surface in the middle) is the semiconductor element 3 bonded through the bonding layer 2 .
[0072] Such as figure 2 As shown, the power module substrate 10 includes: a ceramic substrate 11; and one surface of the ceramic substrate 11 ( figure 2 The middle is the upper surface) circuit layer 12.
[0073] The ceramic substrate 11 is made of AlN (alumi...
no. 2 approach
[0118] Next, a second embodiment of the present invention will be described. In addition, the same code|symbol is attached|subjected to the same structure as 1st Embodiment, and detailed description is abbreviate|omitted.
[0119] Image 6 A power module 101 including a power module substrate 110 according to the second embodiment is shown in .
[0120] This power module 101 includes: a power module substrate 110 provided with a circuit layer 112 and a metal layer 113; Image 6 The middle is the upper surface) the semiconductor element 3 bonded through the bonding layer 2; and disposed on the other side of the metal layer 113 ( Image 6 Middle is the radiator 130 on the lower side).
[0121] Such as Figure 7 As shown, the power module substrate 110 includes: a ceramic substrate 11; Figure 7 The circuit layer 112 is the upper surface in the middle; and the other surface ( Figure 7 The middle is the metal layer 113 of the lower surface).
[0122] The ceramic substrate ...
no. 3 approach
[0158] Next, a third embodiment of the present invention will be described. In addition, the same code|symbol is attached|subjected to the same structure as 1st Embodiment, and detailed description is abbreviate|omitted.
[0159] Figure 11 A power module 201 including the power module substrate 210 according to the third embodiment is shown in FIG.
[0160] The power module 201 includes: a power module substrate 210 provided with a circuit layer 212 and a metal layer 213; Figure 11 The upper surface in the center) the semiconductor element 3 bonded through the bonding layer 2; and the other side of the power module substrate 210 ( Figure 11 Middle is the radiator 230 on the lower side).
[0161] Such as Figure 12 As shown, the power module substrate 210 includes: a ceramic substrate 11; Figure 12 The circuit layer 212 is the upper surface in the middle; and the other surface of the ceramic substrate 11 ( Figure 12 The middle is the metal layer 213 of the lower surf...
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Abstract
Description
Claims
Application Information
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