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Temperature model and modeling method of MOS device subcircuit based on BSIM4 model

A technology of MOS devices and modeling methods, which is applied in the direction of instruments, electrical digital data processing, and special data processing applications, etc., and can solve the problem that the BSIM4 DC temperature model cannot simultaneously adjust linear current and saturation current.

Active Publication Date: 2019-01-01
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The technical problem to be solved by the present invention is to provide a MOS device subcircuit temperature model based on the BSIM4 model, which can solve the defect that the existing BSIM4 DC temperature model of the MOS device cannot simultaneously adjust the linear current and the saturation current

Method used

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  • Temperature model and modeling method of MOS device subcircuit based on BSIM4 model
  • Temperature model and modeling method of MOS device subcircuit based on BSIM4 model
  • Temperature model and modeling method of MOS device subcircuit based on BSIM4 model

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no. 1 example

[0116] In the modeling example of this embodiment, large-size MOS devices (W / L=9 μm / 9 μm), short-channel MOS devices (W / L=9 μm / 0.36 μm), and small-size MOS devices ( W / L=0.342 μm / 0.36 μm) These three size devices are used as target MOS devices, and linear current Idlin and saturation current Idsat are used as electrical characteristic parameters to be adjusted.

[0117] On the basis of the BSIM4 DC temperature model, according to the selected target MOS device size and the linear current Idlin and saturation current Idsat to be adjusted, determine the parameters that need to be established for the sub-circuit temperature model in this embodiment, that is, the normal temperature low field mobility u0 , Gate voltage coefficient ags of bulk charge effect at normal temperature, saturated carrier velocity at normal temperature vsat, gate length factor lvsat of saturated carrier velocity at normal temperature, gate length factor lu0 of low field mobility at normal temperature, crosso...

no. 2 example

[0156] The difference from the first embodiment is that this embodiment selects large-size MOS devices (W / L=9μm / 9μm), short-channel MOS devices (W / L=9μm / 0.36μm), and narrow-channel MOS devices in the device array. MOS devices (W / L=0.342μm / 9μm), small-sized MOS devices (W / L=0.342μm / 0.36μm) are used as the target MOS devices, and the linear current Idlin and saturation current Idsat are still used as the electrical characteristics to be adjusted parameter.

[0157] On the basis of the subcircuit temperature model of the first embodiment, this embodiment needs to add two subcircuit temperature models for narrow channel devices, namely, the channel width factor wu0 of low field mobility at room temperature, and the gate The subcircuit temperature model of the channel width factor wags of the voltage coefficient, the formula is as follows:

[0158] wu0=-9.5E-010+tc15*(temper-25)*(temper-25)+tc16*(temper-25)

[0159] wags=-2.7E-008+tc17*(temper-25)*(temper-25)+tc18*(temper-25)

...

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Abstract

The invention discloses a MOS device sub-circuit temperature model and a modeling method based on a BSIM4 model. The method comprises: 1, obtaining real-testing data through stream sheet testing; 2, selecting a target MOS device and electric characteristic parameters to be adjusted; 3, performing fitting to establish a BSIM4 DC temperature model of the MOS device; 4, based on the fitting BSIM4 DCtemperature model, respectively establishing temperature models of the sub-circuits according to the model parameters of the target MOS device and the electric characteristic parameters to be adjusted; 5, respectively performing curve fitting on the temperature model of the sub-circuit, if the fitting result is consistent with the actual measurement data, entering the step 6, otherwise adjusting the corresponding parameters of the temperature model of the sub-circuit, and repeating the step; 6, the model being finished. A sub-circuit temperature model is added on the basis of the BSIM4 model,so that the DC temperature model of the MOS device more accurately reflects the measured data, and the defect that the BSIM4 DC temperature model of the original MOS device cannot simultaneously adjust the Idlin and the Idsat is overcome.

Description

technical field [0001] The invention relates to the SPICE modeling technology in the field of semiconductor integrated circuits, in particular to a BSIM4 model-based MOS device sub-circuit temperature model and a modeling method. Background technique [0002] SPICE (Simulation Program with Integrated Circuit Emphasis) is a language and simulator software for circuit description and simulation, used to detect the integrity of the connection and function of the circuit, and to predict the behavior of the circuit. SPICE is mainly used for simulation of analog circuits and mixed signal circuits. If you want SPICE to work well, you must provide device-level model parameters. Common SPICE models in the industry include BSIM series, PSP or empirical models. SPICE modeling engineers rely on device theory and experience to extract model parameters for use in SPICE simulation programs. [0003] SPICE modeling is a bridge connecting semiconductor process manufacturing technology and ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/367Y02E60/00
Inventor 顾经纶彭兴伟
Owner SHANGHAI HUALI MICROELECTRONICS CORP