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X-band MEMS phase shifter performance prediction method based on thermal environment and bridge material properties

A technology for predicting material properties and performance, applied in instruments, special data processing applications, electrical digital data processing, etc., can solve problems such as detachment, MEMS bridge height error, MEMS bridge temperature change, etc.

Active Publication Date: 2019-01-04
XIDIAN UNIV
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To complete the phase shifting function of the entire phase shifter, a large number of mechanical structural units are required. With the stepwise increase in the number of mechanical structural units, various side effects will also occur. One of the main problems is that the MEMS phase shifter Changes in the thermal environment will cause changes in the temperature of the MEMS bridge, thereby changing the material properties of the MEMS bridge, resulting in an error in the height of the MEMS bridge when the pull-down voltage remains unchanged, and ultimately affecting the performance of the phase shifter
In order to solve this problem and facilitate engineering applications, it is necessary to estimate the influence of ambient temperature on the performance of MEMS phase shifters in advance. People conduct research from different angles, mainly through the method of optimizing the design of MEMS phase shifters to reduce phase shifter errors. There are two main methods. Two methods: 1. Research MEMS phase shifters from a mechanical point of view. This research method can only improve the structure of MEMS phase shifters, and cannot take into account whether the electrical parameters meet the requirements; 2. From the perspective of circuits, MEMS phase shifters Research, this research method is separated from the physical structure, and cannot accurately predict the performance of the phase shifter at different ambient temperatures

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Embodiment Construction

[0051] The present invention will be further described below in conjunction with the drawings and embodiments.

[0052] Reference figure 1 , The present invention is a method for predicting the performance of an X-band MEMS phase shifter based on the thermal environment and the properties of the bridge material. The specific steps are as follows:

[0053] Step 1. Determine the structural parameters, material properties and electromagnetic operating parameters of the MEMS phase shifter.

[0054] MEMS phase shifter structure parameters such as figure 2 Shown includes the length, width and thickness of the coplanar waveguide transmission line, MEMS bridge and dielectric layer, as well as the distance between two adjacent bridges and the height of the MEMS bridge from the dielectric layer; the material properties of the MEMS phase shifter, including the relative dielectric layer Dielectric constant; the electromagnetic operating parameters of the MEMS phase shifter, including the electr...

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Abstract

The invention discloses an X-band MEMS phase shifter performance prediction method based on thermal environment and bridge material properties, which comprises the following steps: determining the structural parameters, material properties and electromagnetic working parameters of the X-band MEMS phase shifter; establishing a structure-thermal deformation simulation model and thermal simulation, the temperature of MEMS bridge being extracted by simulation; the modulus of elasticity of MEMS bridge material under thermal environment being measured and fitted with a function; the pull-down voltage of MEMS phase shifter being calculated, which causes the height error of MEMS bridge; according to the error, the phase shift of MEMS bridge being calculated by using the electromechanical couplingmodel of MEMS bridge; calculating the phase shift of the MEMS phase shifter; the phase shift of MEMS phase shifter under the current thermal environment and material properties being predicted. The method can directly analyze the influence of thermal environment and bridge material properties on the phase shifter, and directly predict the phase shift of MEMS phase shifter by using ambient temperature, which can guide the design and optimization, and improve the robustness of the phase shifter under the working environment.

Description

Technical field [0001] The invention belongs to the technical field of microwave devices, and specifically relates to a performance prediction method of an X-band MEMS phase shifter based on thermal environment and bridge material properties. It can directly analyze the influence of the thermal environment and the properties of the bridge material on the phase shifter, and use the ambient temperature to directly quantitatively predict the phase shift of the MEMS phase shifter, thereby guiding the design and optimization of the MEMS phase shifter, and improving the phase shifter in the working environment Robustness of performance. Background technique [0002] With the development of RF MEMS (Micro-electromechanical Systems) technology, MEMS phase shifters have been widely used in various radar and satellite navigation fields due to their advantages of miniaturization, low loss, low cost, and good performance. Compared with other forms of MEMS phase shifters, MEMS phase shifters...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 王从思应康刘菁李申王志海王璐严粤飞刘英想钟剑锋王伟宋立伟
Owner XIDIAN UNIV
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