Semiconductor chip for light emitting diode

Abstract

The invention discloses a semiconductor chip for a light emitting diode, comprising an epitaxial unit, at least one current barrier layer, a transparent conductive layer, an N-type electrode and a P-type electrode, wherein the current blocking layer is laminated on an N-type semiconductor layer of the epitaxial cell, the transparent conductive layer is laminated on the P-type semiconductor layer of the epitaxial cell in such a manner as to cover the current blocking layer, and a column of perforations of the transparent conductive layer corresponds to different positions of the current blocking layer, and at least one of the rows of the perforations is different from the adjacent perforations, the N-type electrode is laminated on the N-type semiconductor layer, the P-type electrode is laminated on the transparent conductive layer, and each P-type interdigit of the P-type electrode is respectively formed on and held in each of the perforations of the transparent conductive layer.

Description

technical field [0001] The invention relates to an LED chip, in particular to a semiconductor chip for a light emitting diode and a manufacturing method thereof. Background technique [0002] The front-mounted LED chips in the prior art have two structures, and the industry usually uses photolithography steps to name the front-mounted LED chips of these two structures, that is, the front-mounted LED chip with the three-street structure and the front-mounted LED chip with the five-street structure. That is to say, three photolithography steps are used in the production process of the three-structure front-mount LED chip, and five photolithography steps are used in the five-step structure front-mount LED chip. The lithography steps of the LED chip can also be simplified from five lithography steps to four lithography steps. For the three-step structure of the LED chip, the process includes the Mesa process (steps, referring to the process of making an exposed area of ​​the N-...

AI Technical Summary

Problems solved by technology

Judging from the luminous characteristic curve of the five-layer structure front-mounted LED chip, as the current density increases, the brightness tends to rise and then decrease, and there is a saturation current density, which will affect the luminous efficiency of the five-layer structure front-mounted LED chip.

The ideal high-brightness light-emitting chip structure can maintain the current density of the front-mounted LED chip in a region with high luminous efficiency. However, the current five-channel structure of the front-mounted LED chip cannot achieve

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