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A kind of apu-al high-frequency high-dielectric low-loss material and preparation method thereof

A high-dielectric, low-loss technology, applied in the field of high-frequency, high-dielectric and low-loss materials and their preparation, can solve problems such as restricting development and increasing losses, and achieve the effects of good applicability, simple process, and excellent mechanical properties

Inactive Publication Date: 2020-04-03
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the general low dielectric constant (less than 10) of resin restricts its further development.
Using the percolation theory, adding conductive phases such as metals and carbon materials to the resin, when the volume fraction of the conductive phase is close to the percolation threshold, the dielectric constant can be greatly increased, but it is also accompanied by a sharp increase in loss

Method used

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  • A kind of apu-al high-frequency high-dielectric low-loss material and preparation method thereof
  • A kind of apu-al high-frequency high-dielectric low-loss material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A preparation method of APU-Al high-frequency high-dielectric low-loss material, comprising the steps of:

[0041] (1) Heat the Al powder at 120°C for 0.5h;

[0042] (2) Weigh 4g of APU precursor and 9g of Al powder, add to a beaker to stir and mix, and ultrasonically disperse with an ultrasonic power of 320W for 1h, so that the aluminum powder is evenly distributed;

[0043] (3) Add 2g of APU curing agent to the homogeneously dispersed precursor in step (2), stir and mix, then ultrasonically disperse again, the ultrasonic power is 320W, and the time is 1h;

[0044] (4) transfer the mixed slurry that step (3) obtains into a high-viscosity spray gun and spray on a polytetrafluoroethylene plate to be a resin film with a thickness of 0.5mm;

[0045] (5) The resin film after step (4) is sprayed, solidifies 48h under room temperature, guarantees the in-situ polymerization reaction of acrylic polyurethane, obtains APU-Al high-frequency high-dielectric low-loss material (such...

Embodiment 2

[0048] A preparation method of APU-Al high-frequency high-dielectric low-loss material, comprising the steps of:

[0049] (1) Heat the Al powder at 120°C for 0.5h;

[0050] (2) Weigh 8g of APU precursor and 18g of Al powder, add to a beaker to stir and mix, and ultrasonically disperse, the ultrasonic power is 320W, and the time is 1h, so that the aluminum powder is evenly distributed;

[0051] (3) Add 4g of APU curing agent to the homogeneously dispersed precursor in step (2), stir and mix, then ultrasonically disperse again, the ultrasonic power is 320W, and the time is 1h;

[0052] (4) transfer the mixed slurry that step (3) obtains into a high-viscosity spray gun and spray on a polytetrafluoroethylene plate to be a resin film with a thickness of 1mm;

[0053] (5) curing the resin film sprayed in step (4) for 48 hours at room temperature to ensure the in-situ polymerization reaction of acrylic polyurethane to obtain an APU-Al high-frequency, high-dielectric and low-loss mater...

Embodiment 3

[0056] A preparation method of APU-Al high-frequency high-dielectric low-loss material, comprising the steps of:

[0057] (1) Heat the Al powder at 120°C for 0.5h;

[0058] (2) Weigh 2g of APU precursor and 7g of Al powder, add to a beaker to stir and mix, and ultrasonically disperse, the ultrasonic power is 320W, and the time is 1h, so that the aluminum powder is evenly distributed;

[0059] (3) Add 1g of APU curing agent to the homogeneously dispersed precursor in step (2), after stirring and mixing, ultrasonically disperse again with an ultrasonic power of 320W and a time of 1h;

[0060] (4) transfer the mixed slurry that step (3) obtains into a high-viscosity spray gun and spray on a polytetrafluoroethylene plate to be a resin film with a thickness of 0.5mm;

[0061] (5) curing the resin film sprayed in step (4) for 48 hours at room temperature to ensure the in-situ polymerization of acrylic polyurethane to obtain APU-Al high-frequency, high-dielectric and low-loss materi...

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Abstract

The invention relates to an APU-Al high-frequency high-dielectric low-loss material preparation method, and belongs to the technical field of dielectric materials. The method comprises: (1) heating Alpowder to ensure the generation of a passivation film alumina so as to be spare; (2) mixing the Al powder obtained in the step (1) and an acrylic acid polyurethane precursor, and ultrasonically dispersing to uniformly distribute the aluminum powder into the acrylic acid polyurethane precursor; (3) continuously adding the curing agent of the acrylic acid polyurethane precursor to the step (2), carrying out stirring mixing, ultrasonically dispersing, and spraying a base plate with the obtained mixed slurry to obtain a resin film; and (4) curing the resin film in the step (3) to ensure the in-situ polymerization reaction of the acrylic acid polyurethane so as to obtain the APU-Al high-frequency high-dielectric low-loss material. According to the present invention, the prepared APU-Al high-frequency high-dielectric low-loss material has advantages of high dielectric constant, low dielectric loss, simple process and low manufacturing cost.

Description

technical field [0001] The invention relates to the technical field of dielectric materials, in particular to a high-frequency high-dielectric low-loss material and a preparation method thereof. Background technique [0002] High dielectric and low loss materials are the key to the preparation of capacitors. With the continuous development of electronic information and microwave communication technology towards high frequency, the application frequency band of capacitors is also increasing. Due to the relaxation characteristics of dielectric materials, the dielectric constant decreases with the increase of frequency, especially at high frequency, the dielectric constant drops sharply, so the realization of high dielectric at high frequency has always restricted the development of capacitor materials. In addition, electronic devices are becoming more and more miniaturized, which requires higher capacitance in a smaller volume, so increasing the dielectric constant is also a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L75/14C08K3/08
CPCC08K3/08C08K2003/0806C08L2203/20C08L75/14
Inventor 张子栋王忠阳范润华刘峣
Owner SHANDONG UNIV
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