3D storage device

A memory device, 3D technology, applied in the field of memory, can solve problems affecting the yield and reliability of 3D memory devices, achieve the effect of improving yield and reliability, and avoiding device damage

Pending Publication Date: 2019-02-01
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In a 3D memory device with a NAND structure, a gate stack structure is used to form a memory cell array. In this 3D memory device, a large number of metal wirings are us

Method used

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Embodiment Construction

[0027] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0028] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0029] If it is to describe the situation directly on another layer or an...

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PUM

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Abstract

The present invention discloses a 3D memory device. The 3D memory device includes a gate stack structure, a plurality of channel pillars, and a plurality of dummy channel pillars; the gate stack structure includes a plurality of gate conductors and a plurality of interlayer insulating layers which are alternately stacked; the plurality of channel pillars penetrate the gate stack structure so as toform a transistor; and the plurality of dummy channel pillars pass through at least some of the gate conductors in the gate stack structure so as to provide support, wherein at least one of the dummychannel pillars is connected with a heat dissipation structure. According to the 3D memory device of the invention, the dummy channel pillars are connected to the heat dissipation structure, so thata heat dissipation path can be provided, and therefore, the yield and reliability of the 3D memory device can be improved.

Description

technical field [0001] The present invention relates to the technical field of memory, and more particularly, to a 3D memory device. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectively. Compared with NOR memory device...

Claims

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Application Information

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IPC IPC(8): H01L27/1157H01L27/11578H01L23/367
CPCH01L23/367H10B43/35H10B43/20
Inventor 胡斌肖莉红
Owner YANGTZE MEMORY TECH CO LTD
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