3D storage device

Abstract

The present invention discloses a 3D memory device. The 3D memory device includes a gate stack structure, a plurality of channel pillars, and a plurality of dummy channel pillars; the gate stack structure includes a plurality of gate conductors and a plurality of interlayer insulating layers which are alternately stacked; the plurality of channel pillars penetrate the gate stack structure so as toform a transistor; and the plurality of dummy channel pillars pass through at least some of the gate conductors in the gate stack structure so as to provide support, wherein at least one of the dummychannel pillars is connected with a heat dissipation structure. According to the 3D memory device of the invention, the dummy channel pillars are connected to the heat dissipation structure, so thata heat dissipation path can be provided, and therefore, the yield and reliability of the 3D memory device can be improved.

Description

technical field

[0001] The present invention relates to the technical field of memory, and more particularly, to a 3D memory device. Background technique

[0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost.

[0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectively. Compared with NOR memory device...

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