Wafer for solar cell
A solar cell and chip technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as the deterioration of photoelectric conversion efficiency of solar cells, achieve the effect of reducing reflectivity and improving photoelectric conversion efficiency
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preparation example Construction
[0056] As for the preparation of the solar cell chip of the present invention, the steps listed below can be used, but the present invention is not limited thereto.
[0057] In one embodiment, the above-mentioned solar cell chip can be prepared by soaking the silicon chip in an aqueous salt solution mixed with a high reduction potential metal, and the dissolved metal ions will adhere to the surface of the silicon chip. The metal ion such as Au + 、Ag + 、Pt 2+ , Pd 2+ 、Cu 2+ etc., where Ag + 、Cu 2+ better. The silicon in the area where the metal ions are attached will be oxidized, forming silicon oxide under the metal ions. Then, the silicon chip taken out from the aforementioned saline solution is immersed in a solution containing dissociated fluorine ions in the second pass. The fluorine ions will react with the silicon oxide on the surface of the silicon chip to dissolve it, forming fine unevenness. The above can dissociate fluoride ion solution such as HF, NH 4 HF ...
experiment example 1
[0065] Soak the silicon chip on the cut surface of diamond wire (DW) into AgNO mixed with high reduction potential metal. 3 In aqueous solution, Ag + The content of ions in the solution is 1ppb~10%, soaked for 5sec~60min, the dissolved metal ion Ag + will adhere to the surface of the silicon chip. And Ag + The silicon in the area where the ions are attached will be oxidized, making the Ag + Silicon oxide forms beneath the ions. Then, from the aforementioned AgNO 3 The silicon chip taken out of the aqueous solution, immersed in the secondary channel containing H 2 o 2 In the solution with HF, HF accounts for 5% to 50% of the total volume of the solution, and H 2 o 2 When the total volume of the solution accounts for 1% to 35%, soak for 30sec to 60min. The dissociated fluorine ions react with the silicon oxide on the surface of the silicon chip to dissolve it, forming fine unevenness. Then, put in the third channel containing HF / HNO 3 / H 2 O mixed acid to etch the tr...
experiment example 2
[0067] The silicon chip on the diamond wire (DW) cutting surface was processed in the manner of Experimental Example 1, but the third etching temperature was changed to 6° C. to 8° C., and the etching time was 1 min to 2 min.
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