Cleaning device and cleaning method for reaction kettle used for producing gallium nitride crystals

Abstract

The invention relates to a cleaning device and a cleaning method for a reaction kettle used for producing gallium nitride crystals. The cleaning device comprises a cleaning station, a pipeline systemand a control system. The pipeline system comprises a water inlet pipe, a reaction solution input pipe, a gas conveying pipe and a discharging pipe. The water inlet pipe is provided with a water supply pump. The water supply pump can convey cleaning water into a cavity of the reaction kettle. A liquid supply pump is arranged on a reaction solution input pipe, and the liquid supply pump can conveya reaction solution into the cavity of the reaction kettle. The gas conveying pipe can convey dry gas in a dry gas source into the cavity of the reaction kettle so as to dry the cavity. A circulationdischarging pump is arranged on the discharging pipe. The circulation discharging pump can discharge liquid in the cavity of the reaction kettle out. The control system is used for controlling conveying of the cleaning water, the reaction solution and the dry gas and discharging of the liquid in the cavity of the reaction kettle. By means of the cleaning device, the cleaning station, the pipelinesystem, control equipment and the like are integrated, and therefore the reaction kettle can be efficiently cleaned in a labor-saving manner.

Description

technical field [0001] The invention relates to the technical field of reactor cleaning, in particular to a cleaning device and a cleaning method for a reactor used to produce gallium nitride crystals. Background technique [0002] Gallium nitride crystal is a third-generation semiconductor material with excellent photoelectric performance, thermal stability and chemical stability. [0003] At present, the methods for producing gallium nitride crystals mainly include hydride vapor phase epitaxy, high-pressure nitrogen solution method, flux method and ammonothermal method. Among them, when the ammonothermal method is used to produce gallium nitride crystals, at the end of the production, the inner wall of the reaction kettle used will remain residues such as minerals, gallium nitride polycrystals, and reaction intermediates. If the residues are not cleaned , will affect the service life of the reactor and the production quality of gallium nitride crystals. [0004] At prese...

AI Technical Summary

Problems solved by technology

Among them, when the ammonothermal method is used to produce gallium nitride crystals, at the end of the production, the inner wall of the reaction kettle used will remain residues such as minerals, gallium nitride polycrystals, and reaction intermediates. If the residues are not cleaned , will affect the service life of the reactor and the production quality of gallium nitride crystal

[0004] At present, most of the manual methods are used to carry and clean the reactor, which is labor-intensive, time-consuming and labor-intensive, and the work efficiency is low.

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