Annular temperature sensor

Abstract

The invention discloses an annular temperature sensor which is used for measuring temperature of a transistor. The temperature sensor comprises: an annular P-type heavily doped region, an annular N-type heavily doped region, an annular anode, an annular N well region and an annular P well region which are sequentially arranged in the active region of the transistor in an inside-out order; and an annular cathode arranged in the annular N-type heavily doped region; wherein the annular cathode is shorted to source of the transistor.

Description

technical field [0001] The invention relates to the field of sensors, in particular to an annular temperature sensor. Background technique [0002] The wide bandgap semiconductor material SiC is an ideal material for preparing high-voltage power electronic devices, but SiC power devices are less robust than silicon-based power devices. In order to improve the reliability of the gate oxide layer of SiC power devices, we need to pay close attention to changes in device temperature, thereby reducing performance degradation of the gate oxide layer. [0003] At present, there are mainly two types of temperature sensors used to collect SiC. One is to measure temperature using the linear relationship between the voltage drop on the PN junction barrier and temperature; the second is to use the voltage drop on the Schottky barrier and The linear relationship of temperature is used for temperature measurement, and this type of sensor consumes less power. [0004] However, the report...

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Problems solved by technology

[0004] However, the reported temperature sensor using the above principle to measure temperature cannot completely solve the problem of crosstalk between it and the main device, so it cannot monitor the temperature in real time.

In addition, this type of temperature sensor uses the local temperature to reflect the overall temperature of the chip, and cannot obtain the temperature of the highest point.

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