Unlock instant, AI-driven research and patent intelligence for your innovation.

Threshold adjustable high-voltage metal oxide semiconductor device and preparation method thereof

An oxide semiconductor, adjustable technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as stress relaxation, stress attenuation, and deterioration of the saturation characteristics of the output curve of semiconductor devices

Active Publication Date: 2019-02-26
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are certain defects in the strained silicon technology, such as the severe attenuation of the stress transmitted to the channel, and multiple high-temperature annealing processes will cause the stress to relax. These defects limit the improvement of the device characteristics by the strained silicon technology.
[0006] In addition, in order to solve the defect that the breakdown voltage is reduced, the existing method is to use a shallow trench isolation (Shallow Trench Isolation, STI) structure to increase the breakdown voltage, but the STI structure will cause the saturation characteristics of the output curve of the semiconductor device to deteriorate, and will increase the on-resistance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Threshold adjustable high-voltage metal oxide semiconductor device and preparation method thereof
  • Threshold adjustable high-voltage metal oxide semiconductor device and preparation method thereof
  • Threshold adjustable high-voltage metal oxide semiconductor device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] This embodiment is an exemplary embodiment and relates to the threshold-adjustable high-voltage metal-oxide-semiconductor device of the present invention.

[0057] Such as figure 1 As shown, a threshold-adjustable high-voltage metal oxide semiconductor device includes a semiconductor substrate 1, and the semiconductor substrate 1 may be a silicon substrate.

[0058] There is a channel 12 on the upper surface of the semiconductor substrate 1, and the upper surface of the channel 12 is covered with a gate 2, and the gate 2 includes a gate oxide layer and a polysilicon layer sequentially arranged from bottom to top.

[0059] The upper surface of the semiconductor substrate 1 is covered with an active region 5, and the source region 5 is located next to the channel 12 and is close to the channel 12. The source region 5 includes a lightly doped source region and a heavily doped source region. The lightly doped source region is located next to the channel 12 and is close to ...

Embodiment 2

[0080] This embodiment is a schematic embodiment of the present invention, and relates to the preparation method of the threshold-adjustable high-voltage metal oxide semiconductor device of the present invention.

[0081] Such as figure 2 As shown, a method for preparing a threshold-adjustable high-voltage metal-oxide-semiconductor device includes the following steps:

[0082] Step S1, forming a first high voltage well region and a second high voltage well region, the first high voltage well region and the second high voltage well region are located above the semiconductor substrate;

[0083] Wherein, the first high voltage well region and the second high voltage well region cover the upper surface of the semiconductor substrate, and the first high voltage well region and the second high voltage well region are adjacent;

[0084] And the first high voltage well region and the second high voltage well region are both formed by ion implantation;

[0085] Step S2, forming a fi...

Embodiment 3

[0113] Further, the preparation method is described in detail by using the cross-sectional diagram of the main process flow of the threshold-adjustable high-voltage metal-semiconductor device of the present invention.

[0114] Such as Figure 5 As shown, the first high voltage well region 3 and the second high voltage well region 4 are formed on the upper surface of the semiconductor substrate 1 by the ion implantation method, and the first high voltage well region 3 and the second high voltage well region 4 cover the semiconductor substrate 1 and the first high voltage well region 3 is adjacent to the second high voltage well region 4, the first high voltage well region 3 is HVPW, and the second high voltage well region 4 is HVNW.

[0115] Such as Figure 6 As shown, the first isolation trench 13 is formed in the first high voltage well region 3 through STI, and the second isolation trench 14 is formed in the second high voltage well region 4 through STI.

[0116] Such as ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a threshold adjustable high-voltage metal oxide semiconductor device, which comprises a semiconductor substrate and a channel on the upper surface of the semiconductor substrate. The device further comprises: a grid; a source region; a drain region; a first base; a second base; a first isolation groove; a second isolation groove; a third isolation groove; a buried oxygen layer; a first insulating plate; a second insulating plate; a first high voltage well region; a second high voltage trap region. The invention also relates to a preparation method of the threshold adjustable high-voltage metal oxide semiconductor device. An HVMOS can regulate cut-in voltage and breakdown voltage without affecting saturation currents by arranging the first base, the second base, thefirst insulating field plate and the second insulating field plate; the HVMOS with different process nodes is realized by combining SOI and STI.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a threshold-adjustable high-voltage metal oxide semiconductor device and a preparation method thereof. Background technique [0002] Lateral Double Diffused MetalOxide Semiconductor (LDMOS) is the earliest and most widely used lateral high-voltage power Metal Oxide Semiconductor Field-Effect Transistor (Metal Oxide Semiconductor Field-Effect Transistor, MOSFET) Or high-voltage metal oxide semiconductor transistor (High Voltage Metal Oxide Semiconductor, HVMOS), its advantages are that, as a field control device, its control is simple, the switching speed is fast, the safe working area is large, there is no latch, the thermal stability is good, and it is easy to It is integrated with a complementary metal oxide semiconductor transistor (Complementary Metal Oxide Semiconductor, CMOS). [0003] In HVMOS, the drift (Drift) region at the drain (Drain) terminal is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/40H01L21/336
CPCH01L29/0603H01L29/0615H01L29/0684H01L29/402H01L29/66477H01L29/7802
Inventor 谈嘉慧彭宇飞孙昌钱俊
Owner SHANGHAI HUALI MICROELECTRONICS CORP