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Threshold adjustable high voltage metal oxide semiconductor device and preparation method thereof

An oxide semiconductor, adjustable technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of semiconductor device output curve saturation characteristics deterioration, limitation, stress relaxation, etc.

Active Publication Date: 2021-07-27
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are certain defects in the strained silicon technology, such as the severe attenuation of the stress transmitted to the channel, and the stress relaxation caused by multiple high-temperature annealing processes, these defects limit the improvement of the device characteristics by the strained silicon technology
[0006] In addition, in order to solve the defect that the breakdown voltage is reduced, the existing method is to use a shallow trench isolation (Shallow Trench Isolation, STI) structure to increase the breakdown voltage, but the STI structure will cause the saturation characteristics of the output curve of the semiconductor device to deteriorate, and will increase the on-resistance

Method used

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  • Threshold adjustable high voltage metal oxide semiconductor device and preparation method thereof
  • Threshold adjustable high voltage metal oxide semiconductor device and preparation method thereof
  • Threshold adjustable high voltage metal oxide semiconductor device and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0056] This embodiment is an exemplary embodiment, and relates to the threshold-adjustable high-voltage metal-oxide-semiconductor device of the present invention.

[0057] Such as figure 1 As shown, a threshold-adjustable high-voltage metal oxide semiconductor device includes a semiconductor substrate 1, and the semiconductor substrate 1 may be a silicon substrate.

[0058] There is a channel 12 on the upper surface of the semiconductor substrate 1, and the upper surface of the channel 12 is covered with a gate 2, and the gate 2 includes a gate oxide layer and a polysilicon layer sequentially arranged from bottom to top.

[0059] The upper surface of the semiconductor substrate 1 is covered with an active region 5, and the source region 5 is located next to the channel 12 and is close to the channel 12. The source region 5 includes a lightly doped source region and a heavily doped source region. The lightly doped source region is located next to the channel 12 and is close to...

Embodiment 2

[0080] This embodiment is an exemplary embodiment of the present invention, and relates to a method for manufacturing a threshold-adjustable high-voltage metal-oxide-semiconductor device of the present invention.

[0081] Such as figure 2 As shown, a method for preparing a threshold-adjustable high-voltage metal-oxide-semiconductor device includes the following steps:

[0082] Step S1, forming a first high voltage well region and a second high voltage well region, the first high voltage well region and the second high voltage well region are located above the semiconductor substrate;

[0083] Wherein, the first high voltage well region and the second high voltage well region cover the upper surface of the semiconductor substrate, and the first high voltage well region and the second high voltage well region are adjacent;

[0084] And the first high voltage well region and the second high voltage well region are both formed by ion implantation;

[0085] Step S2, forming a fi...

Embodiment 3

[0113] Further, the preparation method is described in detail by using the sectional view of the main process flow of the threshold-adjustable high-voltage metal-semiconductor device of the present invention.

[0114] Such as Figure 5 As shown, the first high voltage well region 3 and the second high voltage well region 4 are formed on the upper surface of the semiconductor substrate 1 by the ion implantation method, and the first high voltage well region 3 and the second high voltage well region 4 cover the semiconductor substrate 1 and the first high voltage well region 3 is adjacent to the second high voltage well region 4, the first high voltage well region 3 is HVPW, and the second high voltage well region 4 is HVNW.

[0115] Such as Figure 6 As shown, the first isolation trench 13 is formed by STI in the first high voltage well region 3 , and the second isolation trench 14 is formed by STI in the second high voltage well region 4 .

[0116] Such as Figure 7 As show...

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Abstract

The invention relates to a high-voltage metal oxide semiconductor device with adjustable threshold, which includes a semiconductor substrate and a channel located on the upper surface of the semiconductor substrate, and also includes: a gate; a source region; a drain region; a A first base; a second base; a first isolation groove; a second isolation groove; a third isolation groove; a buried oxide layer; a first insulating plate; a second insulating plate; a first high voltage well region; a second high voltage well region. It also relates to a preparation method of a threshold-adjustable high-voltage metal oxide semiconductor device. The advantage is that by setting the first base, the second base, the first insulating field plate and the second insulating field plate, HVMOS can adjust the turn-on voltage and breakdown voltage without affecting the saturation current; through SOI and STI Combined to realize HVMOS of different process nodes.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a threshold-adjustable high-voltage metal oxide semiconductor device and a preparation method thereof. Background technique [0002] The lateral double diffused metal oxide semiconductor transistor (Lateral Double Diffused MetalOxide Semiconductor, LDMOS) is the earliest and most widely used lateral high voltage power metal oxide semiconductor field effect transistor (Metal Oxide Semiconductor Field-Effect Transistor, MOSFET) or High Voltage Metal Oxide Semiconductor (HVMOS), as a field control device, has the advantages of simple control, fast switching speed, large safe working area, no lock-up, good thermal stability, and easy integration with Complementary Metal Oxide Semiconductor (CMOS) integration. [0003] In HVMOS, the drift (Drift) region at the drain (Drain) terminal is related to the degree of withstand voltage, so in order to improve the withstan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/40H01L21/336
CPCH01L29/0603H01L29/0615H01L29/0684H01L29/402H01L29/66477H01L29/7802
Inventor 谈嘉慧彭宇飞孙昌钱俊
Owner SHANGHAI HUALI MICROELECTRONICS CORP