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A kind of preparation method of nitrogen-doped carbon nanotube

A technology of nitrogen-doped carbon and nanotubes, which is applied in the field of preparation of nitrogen-doped carbon nanotubes, and can solve the problems of harsh reaction conditions, insufficient specific surface area, and low nitrogen doping amount of nitrogen-doped carbon nanotubes. , to achieve the effects of mild reaction conditions, convenient operation, and easy access to process raw materials

Active Publication Date: 2022-01-14
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the reaction conditions of the above-mentioned patents are harsh, and the nitrogen doping amount of the prepared nitrogen-doped carbon nanotubes is not high, and the specific surface area cannot meet the requirements, so it is difficult to be applied in industrial production.

Method used

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  • A kind of preparation method of nitrogen-doped carbon nanotube
  • A kind of preparation method of nitrogen-doped carbon nanotube
  • A kind of preparation method of nitrogen-doped carbon nanotube

Examples

Experimental program
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Effect test

Embodiment 1

[0035] Dissolve 0.87g of cobalt nitrate hexahydrate and 0.72g of urea in 40ml of ultrapure water and 40ml of ethanol, place in a 100mL hydrothermal reactor with polytetrafluoroethylene, and ultrasonicate for 5 minutes. Then the hydrothermal reaction kettle was tightened and sealed, and placed in a constant temperature oven at 90°C for 8 hours. The resulting solid product was washed three times with deionized water, and placed in a constant temperature oven at 80°C for 12 hours to obtain Co(OH) 2 Precursor. Co(OH) 2 The precursor was placed in a tube furnace, raised to 300 °C at a rate of 2 °C / min in an air atmosphere, and kept at 300 °C for 3 hours to obtain Co 3 o 4 Nanowires. figure 1 for Co 3 o 4 Transmission electron micrograph of nanowires.

Embodiment 2

[0037] Get the Co prepared in 500mg embodiment 1 3 o 4 The nanowires are placed in tris buffer solution with pH=8.5, and ultrasonicated for 20 minutes. Add 500 mg of dopamine to the above suspension, stir for 24 hours, centrifuge, and dry in vacuum to obtain Co 3 o 4 @polydopamine-500. Will Co 3 o 4@Polydopamine-500 in an argon atmosphere with a heating rate of 2 °C / min to 500 °C and keep at 500 °C for 2 hours; then at a heating rate of 5 °C / min to 600 °C, and at 600 Leave on for 2 hours. The obtained solid was placed in 100 mL of hydrochloric acid solution with a concentration of 1 mol / L and stirred for 24 hours, washed with deionized water, and dried to obtain a nitrogen-doped carbon nanotube product. figure 2 Transmission electron micrograph of nitrogen-doped carbon nanotubes, image 3 A high-magnification transmission electron micrograph of nitrogen-doped carbon nanotubes. The results of chemical element analysis showed that the nitrogen content in the product wa...

Embodiment 3

[0039] Get the Co prepared in 500mg embodiment 1 3 o 4 The nanowires are placed in tris buffer solution with pH=8.5, and ultrasonicated for 20 minutes. Add 500 mg of dopamine to the above suspension, stir for 24 hours, centrifuge, and dry in vacuum to obtain Co 3 o 4 @polydopamine-500. Will Co 3 o 4 @Polydopamine-500 in an argon atmosphere with a heating rate of 2 °C / min to 500 °C and keep at 500 °C for 2 hours; then at a heating rate of 5 °C / min to 700 °C and at 700 °C Leave on for 2 hours. The obtained solid was placed in 100 mL of hydrochloric acid solution with a concentration of 1 mol / L and stirred for 24 hours, washed with deionized water, and dried to obtain a nitrogen-doped carbon nanotube product. Figure 4 Transmission electron micrograph of nitrogen-doped carbon nanotubes, Figure 5 A high-magnification transmission electron micrograph of nitrogen-doped carbon nanotubes. The results of chemical element analysis showed that the nitrogen content in the produc...

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Abstract

The invention relates to a preparation method of nitrogen-doped carbon nanotubes, which are synthesized by a hard template method, comprising the following steps: using cobalt nitrate hexahydrate as a cobalt source in a reaction medium of water and ethanol, and synthesized by a hydrothermal method Co(OH) 2 precursor; under certain conditions, the Co(OH) 2 The precursor is transformed into Co 3 o 4 nanowires; in tris buffer solution with a certain pH value, in Co 3 o 4 A layer of polydopamine is coated on the surface of the nanowire, and then it is carbonized at a high temperature in an inert atmosphere, finally etched by HCl, washed with deionized water for several times, and dried to obtain the product. Compared with the existing technology for preparing carbon nanotubes, the preparation process of the present invention has easy-to-obtain raw materials, convenient operation and mild reaction conditions, and the prepared nitrogen-doped carbon nanotubes have the characteristics of high nitrogen doping amount and large specific surface area.

Description

technical field [0001] The invention relates to the field of nanomaterial preparation, in particular to a method for preparing nitrogen-doped carbon nanotubes. Background technique [0002] Nanomaterials have many excellent physical and chemical properties, especially porous carbon nanomaterials are widely used in catalysis, adsorption separation, sensing, electrochemical and other fields because of their controllable pore structure and surface chemical properties. Doping and other methods can further improve the performance of porous carbon materials and increase their application value. [0003] Nitrogen is an ideal element for doping carbon materials. Nitrogen doping can effectively improve the physical and chemical properties of carbon materials, and produce special optical, magnetic and electrical properties. The synthesis research has aroused increasing interest of scientists. The introduction of nitrogen atoms into the structure of porous carbon materials is bound to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/16C01G51/04B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B32/16C01G51/04C01P2004/03C01P2004/04C01P2004/61
Inventor 李辉封波王萌李远华韩昕宸蓝梓桀顾华军
Owner SHANGHAI NORMAL UNIVERSITY