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A kind of preparation method of perfect absorber and perfect absorber

A technology of perfect absorption and metasurface, which is applied in the photographic process of patterned surface, optical mechanical equipment, instruments, etc., can solve the problems of unfavorable miniaturization and integration of optical devices, increase the thickness of devices, etc., and expand the range of absorption bands , Improve the effect of integration

Active Publication Date: 2021-12-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

However, the above method greatly increases the thickness of the device, which is not conducive to the miniaturization and integration of optical devices.

Method used

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  • A kind of preparation method of perfect absorber and perfect absorber
  • A kind of preparation method of perfect absorber and perfect absorber
  • A kind of preparation method of perfect absorber and perfect absorber

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Embodiment Construction

[0045] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0046] The embodiment of the present invention provides a kind of preparation method of perfect absorber, such as figure 1 As shown, the method includes:

[0047] S11. Select silicon dioxide as the substrate, then ultrasonically clean the silicon dioxide substrate with deionized water, ethanol, and acetone, dry it with nitrogen, and then pre...

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Abstract

The invention provides a method for preparing a perfect absorber and a perfect absorber, the method comprising selecting silicon dioxide as a substrate, and then sequentially preparing a first metal layer, a dielectric layer, and a polymethyl methacrylate photoresist; according to The preset periodic metasurface array structure exposes the baked photoresist, and the metasurface cells in the preset periodic metasurface array structure are uniformly arranged with five cells containing at least one uniformly distributed Five discs with diameters d1 to d5 respectively, the discs with diameters d1 to d5 and the P of the metasurface primitive cell x and P y Correspondingly; and spray metal material on the top layer of the developed structure to form a second metal layer, so that the first metal layer, the dielectric layer, and the second metal layer form a broadband metasurface perfect absorber based on regional resonance. The invention can effectively expand the range of the absorption waveband, realize the conversion of the broadband optical perfect absorber from a three-dimensional structure to a two-dimensional structure, and improve the integration degree of the system.

Description

technical field [0001] The invention relates to the technical field of optical perfect absorbers, in particular to a preparation method of a perfect absorber and the perfect absorber. Background technique [0002] The existing metamaterial optical perfect absorber is realized based on the principle of equivalent impedance matching. This theory regards metamaterials as an equivalent medium, and the regulation of the light field depends on the accumulation of the optical path when light propagates in it and interacts with the material. , and use equivalent permittivity ε(ω) and equivalent permeability μ(ω) to describe its optical properties. The metamaterial perfect absorber generally has a three-layer structure: the first layer is the designed metamaterial micro-nano structure layer, the second layer is a dielectric layer, and the third layer is a metal substrate. Among them, the micro-nano structure of the first layer provides an electrical resonance response, while the fir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/00G03F7/00C23C14/35C23C14/30C23C14/18
CPCG03F7/00G02B5/003C23C14/185C23C14/30C23C14/35
Inventor 王然岳嵩刘嵩侯煜李曼张喆孙鸿雁张紫辰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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