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Perfect absorber and preparation method thereof

A perfect absorption and metasurface technology, applied in the field of perfect absorber and optical perfect absorber, can solve the problems of increasing device thickness, unfavorable miniaturization and integration of optical devices, and achieve the effect of improving integration and expanding the range of absorption bands

Active Publication Date: 2019-03-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above method greatly increases the thickness of the device, which is not conducive to the miniaturization and integration of optical devices.

Method used

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  • Perfect absorber and preparation method thereof
  • Perfect absorber and preparation method thereof
  • Perfect absorber and preparation method thereof

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Embodiment Construction

[0045] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0046] The embodiment of the present invention provides a kind of preparation method of perfect absorber, such as figure 1 As shown, the method includes:

[0047] S11. Select silicon dioxide as the substrate, then ultrasonically clean the silicon dioxide substrate with deionized water, ethanol, and acetone, dry it with nitrogen, and then pre...

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Abstract

The invention provides a perfect absorber and a preparation method thereof. The method comprises the steps that silicon oxide is taken as a substrate, and a first metal layer, a medium layer and polymethyl methacrylate photoresist are sequentially prepared; the roasted photoresist is exposed according to a preset periodic hypersurface array structure, five uniformly distributed round discs of which the diameters are at least one of the five diameters of d1 to d5 respectively are uniformly arranged in a hypersurface primitive cell in the preset periodic hypersurface array structure, and the round discs with the diameters of d1 to d5 correspond to Px and Py of the hypersurface primitive cell; a metal material is sprayed to the top layer of a developed structure to form a second metal layer,and therefore the first metal layer, the medium layer and the second layer form a broadband hypersurface perfect absorber based on regional resonance. The perfect absorber has the advantages that theabsorbing wavelength range can be effectively expanded, the conversion of the broadband optical perfect absorber from a three-dimensional structure to a two-dimensional structure is achieved, and theintegration degree of the system is improved.

Description

technical field [0001] The invention relates to the technical field of optical perfect absorbers, in particular to a preparation method of a perfect absorber and the perfect absorber. Background technique [0002] The existing metamaterial optical perfect absorber is realized based on the principle of equivalent impedance matching. This theory regards metamaterials as an equivalent medium, and the regulation of the light field depends on the accumulation of the optical path when light propagates in it and interacts with the material. , and use equivalent permittivity ε(ω) and equivalent permeability μ(ω) to describe its optical properties. The metamaterial perfect absorber generally has a three-layer structure: the first layer is the designed metamaterial micro-nano structure layer, the second layer is a dielectric layer, and the third layer is a metal substrate. Among them, the micro-nano structure of the first layer provides an electrical resonance response, while the fir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/00G03F7/00C23C14/35C23C14/30C23C14/18
CPCG03F7/00G02B5/003C23C14/185C23C14/30C23C14/35
Inventor 王然岳嵩刘嵩侯煜李曼张喆孙鸿雁张紫辰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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