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Semiconductor-coated nanometer mesoporous metal film structure and terahertz wave enhancement system

A technology of nano-mesoporous and metal thin films, applied in solid-state lasers, instruments, measuring devices, etc., can solve the problems that the upper limit of terahertz wave energy cannot be fundamentally improved, and achieve the effect of high nonlinear coefficient and surface electron emission ability

Active Publication Date: 2021-10-08
GUANGDONG ROI OPTOELECTRONICS TECH CO LTD +2
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, none of these methods can fundamentally increase the energy upper limit of terahertz waves.

Method used

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  • Semiconductor-coated nanometer mesoporous metal film structure and terahertz wave enhancement system
  • Semiconductor-coated nanometer mesoporous metal film structure and terahertz wave enhancement system
  • Semiconductor-coated nanometer mesoporous metal film structure and terahertz wave enhancement system

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Embodiment Construction

[0030] The specific structure of the terahertz wave enhancement system based on the semiconductor coated nanometer mesoporous metal thin film structure is as follows: figure 1 As shown, it includes a femtosecond pulsed laser module 100 , a terahertz wave generation module 200 and a terahertz detection module 300 . The femtosecond pulse laser module 100 is used to output the femtosecond pulse laser, and the femtosecond pulse laser is used as a pump light source for generating terahertz waves; the terahertz wave generation module 200 is excited by the femtosecond pulse laser to generate strong field Hertzian wave; the terahertz detection module 300 is used to detect the strong-field terahertz wave generated by the terahertz wave generation module 200 .

[0031] The femtosecond pulsed laser module 100 includes a fiber optic femtosecond pulsed laser 101 and a beam splitter 102, and the terahertz wave generation module 200 includes plane mirrors 201, 202, 203, 204, a focusing lens...

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Abstract

The invention provides a method for preparing a nanometer mesoporous metal thin film structure with enhanced field terahertz wave radiation, comprising the following steps: first preparing an alloy thin film containing at least two metal elements, and then under certain conditions at least one of the metal elements The elements are etched out by chemical reaction to obtain a metal film with a rough surface and a large number of nanometer mesopores inside, and then the metal film with a rough surface and a large number of nanometer mesopores inside is plated on the surface of a semiconductor substrate. The nano-mesoporous metal film structure prepared by this method can fundamentally increase the energy upper limit of the terahertz wave, thereby obtaining a strong-field terahertz wave.

Description

technical field [0001] The invention belongs to the field of terahertz wave generation, and mainly relates to a system for increasing the conversion efficiency of terahertz waves by using a semiconductor-plated nano-mesoporous metal structure, a semiconductor-plated nano-mesoporous metal structure and a preparation method thereof. Background technique [0002] Terahertz waves have a frequency of 0.1~10 THz (1THz=10 12 Hz), between the microwave and infrared bands of the electromagnetic spectrum. Terahertz wave is an interdisciplinary field of macroelectronics and microphotonics research. In addition to the wave-particle duality of electromagnetic waves, it also has low energy, coherence, transient, high penetration, spectral fingerprint characteristics, broadband Therefore, terahertz waves have great applications in the fields of cosmic background radiation, biomedical imaging, cancer detection, drug detection, explosive detection, nondestructive imaging, security inspecti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/3586H01S1/02
CPCG01N21/3586H01S1/02
Inventor 曾和平南君义李敏张玲
Owner GUANGDONG ROI OPTOELECTRONICS TECH CO LTD
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