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A method and device for calculating isokinetic parameters of a film layer etched area

A technology of mechanical parameters and film layer etching, applied in computer-aided design, calculation, electrical digital data processing, etc., can solve the problems that can only be used in regular areas and is difficult, and achieve easy implementation, low cost and time consumption , the effect of accurate calculation results

Active Publication Date: 2019-04-02
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention at least partly solves the problem that the existing methods for obtaining equivalent kinetic parameters of etching regions are difficult or can only be used in regular regions, and provides an equivalent mechanics of film etching regions that is simple to implement and suitable for irregular regions Parameter Calculation Method and Equipment

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  • A method and device for calculating isokinetic parameters of a film layer etched area
  • A method and device for calculating isokinetic parameters of a film layer etched area
  • A method and device for calculating isokinetic parameters of a film layer etched area

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Embodiment 1

[0058] This embodiment provides a method for calculating the equivalent mechanical parameters of the film etching region, which includes:

[0059] S11. Selecting at least a part of the etching area of ​​the film layer as the analysis area;

[0060] S12. Establishing a plane model corresponding to the analysis area;

[0061] S13. Carrying out grid division on the planar model with the first density;

[0062] S14, according to the actual mechanical parameters of the film layer material and the grid division of the first density, the first simulated stress of the plane model under simulated boundary conditions is analyzed by the finite element method;

[0063] S15. Calculate the equivalent mechanical parameters, wherein, under the simulated boundary conditions, the equivalent mechanical parameters can make the anisotropic blind plate with the same boundary size as the plane model reach the first simulated stress.

[0064] In the calculation method of the equivalent mechanical p...

Embodiment 2

[0066] Such as Figure 1 to Figure 8 As shown, this embodiment provides a method for calculating the equivalent mechanical parameters of the etched area of ​​the film layer.

[0067] Wherein, the etched area refers to an area with certain etched openings (patterns) in the film layer of the substrate (such as the display substrate).

[0068] The equivalent mechanical parameter refers to: if the etching area is regarded as an anisotropic planar blind plate (that is, a complete two-dimensional plate with different mechanical properties in each direction, no thickness, and no opening), the planar blind plate can be made Mechanical parameters that exhibit the same mechanical behavior as the actual etched area. Specifically, the equivalent mechanical parameters may include equivalent elastic modulus, equivalent Poisson's ratio, and the like.

[0069] The calculation method of the equivalent mechanical parameters of the film layer etching region in this embodiment specifically incl...

Embodiment 3

[0128] This embodiment provides a calculation device for the equivalent mechanical parameters of the film etching area, which includes:

[0129] an area selection unit, configured to select at least a part of the film etching area as the analysis area;

[0130] a model building unit for building a planar model corresponding to the analysis area;

[0131] A meshing unit, used for meshing the planar model;

[0132] The simulated stress calculation unit is used to analyze the simulated stress of the plane model under simulated boundary conditions through the finite element method according to the actual mechanical parameters of the film material and the current grid division;

[0133] The equivalent mechanical parameter calculation unit is used to calculate the equivalent mechanical parameter, wherein, under the simulated boundary conditions, the equivalent mechanical parameter can make the anisotropic blind plate with the same boundary size as the plane model reach the first si...

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Abstract

The invention provides a method and device for calculating equivalent optical parameters of a film layer etching region, which belongs to the technical field of etching region design, and can at leastpartially solve the problem that the existing method for obtaining the equivalent optical parameters of the etching region is high in difficulty or can only be used for a regular region. The method for calculating the film layer etching area equivalent force optical parameters comprises the steps of selecting at least one part of a film layer etching area as an analysis area; establishing a planemodel corresponding to the analysis area; carrying out grid division on the plane model at a first density; analyzing first simulation stress of the plane model under the simulation boundary condition through a finite element method according to the actual mechanical parameters of the film material and the grid division of the first density; calculating an isokinetic parameter, wherein the isokinetic parameter enables the anisotropic planar blind plate of the same size as the planar model boundary to reach a first simulated stress under simulated boundary conditions.

Description

technical field [0001] The invention belongs to the technical field of etching area design, and in particular relates to a calculation method and equipment for equivalent mechanical parameters of an etching area of ​​a film layer. Background technique [0002] Many film layers of the display substrate need to be etched with openings (patterns) to form certain etched areas (such as micro etched areas). Different etched areas have different stress distribution and deformation, if the deformation is not appropriate, it may cause defects. Therefore, the stress distribution and deformation of the designed etching area must be calculated first, and if it is not suitable, the number, size, shape, and position of the openings must be adjusted. [0003] One calculation method of the above stress distribution and deformation is to establish a three-dimensional model of the etching area, and calculate the stress distribution and deformation according to the actual mechanical parameter...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F2111/04G06F30/23G06F2119/06H01L21/762G06F2119/14H01L21/76829G06F30/30G06F30/20G06F30/10
Inventor 黄俊杰王琦张健吕守华杨成发周猛
Owner BOE TECH GRP CO LTD
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