Unlock instant, AI-driven research and patent intelligence for your innovation.

Light pipe structure, its manufacturing method and image sensing element

A manufacturing method and light pipe technology are applied in the field of a light pipe structure, its manufacturing method and image sensing element, and a light pipe structure with an air gap, which can solve problems such as inability to effectively capture incident light, and achieve optimal sensitivity, Increase the effect of critical angle

Active Publication Date: 2021-06-11
POWERCHIP SEMICON MFG CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the incident angle of the incident light exceeds the critical angle that the light pipe structure can produce total reflection, the light pipe structure will not be able to effectively capture the incident light

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light pipe structure, its manufacturing method and image sensing element
  • Light pipe structure, its manufacturing method and image sensing element
  • Light pipe structure, its manufacturing method and image sensing element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] Figure 1A to Figure 1E It is a cross-sectional view of the manufacturing process of the image sensing device according to an embodiment of the present invention.

[0057] First, please refer to Figure 1A , providing a substrate 100. The material of the substrate 100 is semiconductor material such as silicon, for example. The substrate 100 may optionally include at least one of the photosensitive element 102 , the isolation structure 104 and the floating diffusion region 106 . The photosensitive element 102 is, for example, a photodiode. The isolation structure 104 is located on one side of the photosensitive element 102 . The isolation structure 104 is, for example, a shallow trench isolation structure. The floating diffusion region 106 is separated from the photosensitive element 102 and located on the other side of the photosensitive element 102 .

[0058] Next, a transfer gate structure 108 can be formed on the substrate 100 between the photosensitive element ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
refractive indexaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

The invention discloses a light pipe structure, its manufacturing method and an image sensing element. The light pipe structure includes a dielectric layer, a light pipe layer and an air gap. The dielectric layer is disposed on the base, wherein the dielectric layer has a first opening. The light pipe layer is disposed in the first opening. The air gap is located between the light pipe layer and the sidewall of the first opening.

Description

technical field [0001] The present invention relates to a light pipe structure, its manufacturing method and an image sensing element, and in particular to a light pipe structure with an air gap, its manufacturing method and an image sensing element. Background technique [0002] The light pipe structure can be used to capture and concentrate incident light, and is often used to increase the sensitivity of optical components such as image sensor components. However, when the incident angle of the incident light exceeds the critical angle at which the light pipe structure can generate total reflection, the light pipe structure will not be able to effectively capture the incident light. Therefore, how to increase the critical angle of total reflection that can be generated by the light pipe structure to capture and gather a larger amount of incident light, so as to further improve the sensitivity of the image sensing device is an active development goal in the industry. Cont...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14625H01L27/14629H01L27/14685Y02P70/50
Inventor 李世平林昌宗陈昱安王美文
Owner POWERCHIP SEMICON MFG CORP