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Ultraviolet detector of p-bn/i-algan/n-algan and its manufacturing method

An ultraviolet detector and detector technology, which is applied in the field of ultraviolet detectors, can solve the problems of low hole concentration of AlGaN materials, longer detector response time, lower mobility, etc., and achieve quantum efficiency and spectral responsivity improvement. Effects of quantum efficiency, spectral responsivity, and shortened response time

Active Publication Date: 2020-09-04
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the increase of the Al composition of the AlGaN material, the difficulty of material epitaxy will also increase, and the ionization energy of the donor impurity and the acceptor impurity of the AlGaN material increases with the increase of the Al composition, reducing its current-carrying The concentration of electrons, especially the hole concentration of P-type AlGaN material is extremely low
In addition, with the increase of the Al composition, the epitaxial quality of the material decreases, and the increase of the compensation center and the scattering center causes the mobility to decrease, which makes the conductivity of the P-type AlGaN material extremely low, and it cannot form a good bond with the metal. ohmic contact
As a result, the response time of the detector becomes longer, the quantum efficiency decreases, and the spectral responsivity becomes worse.

Method used

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  • Ultraviolet detector of p-bn/i-algan/n-algan and its manufacturing method
  • Ultraviolet detector of p-bn/i-algan/n-algan and its manufacturing method

Examples

Experimental program
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Effect test

Embodiment 1

[0039] Example 1, preparing an AlGaN-based ultraviolet detector with a detection cut-off wavelength of 345 nm.

[0040] In step one, the substrate is pretreated.

[0041] 1a) After cleaning the c-plane sapphire substrate, place it in the metal organic chemical vapor deposition MOCVD reaction chamber, and reduce the vacuum degree of the reaction chamber to 2×10 -2Torr: Introduce hydrogen into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 200 Torr, heat the substrate to a temperature of 1000°C and keep it for 9 minutes to complete the heat treatment of the substrate;

[0042] 2a) The heat-treated substrate is placed in a reaction chamber with a temperature of 1150° C., and ammonia gas with a flow rate of 4000 sccm is passed in for 10 minutes to carry out nitriding to complete the nitriding.

[0043] Step 2, growing an AlN nucleation layer.

[0044] On the substrate after nitriding, the MOCVD process is used under the cond...

Embodiment 2

[0057] Example 2, preparing an AlGaN-based ultraviolet detector with a detection cut-off wavelength of 325 nm.

[0058] Step 1, pretreating the substrate.

[0059] First, after the c-plane sapphire substrate is cleaned, it is placed in a metal-organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of the reaction chamber is reduced to 2×10 -2 Torr: Introduce hydrogen into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 750 Torr, heat the substrate to a temperature of 1200°C and keep it for 5 minutes to complete the heat treatment of the substrate;

[0060] Then, the heat-treated substrate was placed in a reaction chamber with a temperature of 1100° C., and ammonia gas with a flow rate of 3000 sccm was flowed in for 8 minutes to carry out nitriding to complete the nitriding.

[0061] Step 2, growing an AlN nucleation layer.

[0062] On the substrate after nitriding, the MOCVD process is used under ...

Embodiment 3

[0075] Example 3, preparing an AlGaN-based ultraviolet detector with a detection cut-off wavelength of 300 nm.

[0076] Step A, pretreating the substrate.

[0077] After the c-plane sapphire substrate was cleaned, it was placed in the metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of the reaction chamber was reduced to 2×10 -2 Torr: Introduce hydrogen gas into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 50Torr, heat the substrate to a temperature of 900°C and keep it for 5min to complete the heat treatment of the substrate; then heat-treated the substrate Place in a reaction chamber with a temperature of 1050° C., flow nitrogen gas with a flow rate of 2000 sccm, and carry out nitriding for 5 minutes to complete nitriding.

[0078] Step B, growing an AlN nucleation layer.

[0079] On the substrate after nitriding, the MOCVD process is adopted. Under the condition of the temperatur...

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Abstract

The invention discloses a p-BN / i-AlGaN / n-AlGaN ultraviolet detector and a manufacturing method thereof. The p-BN / i-AlGaN / n-AlGaN ultraviolet detector mainly solves the problem that an existing AlGaN-based ultraviolet detector has a long response time, low quantum efficiency and poor spectral response. The p-BN / i-AlGaN / n-AlGaN ultraviolet detector includes, from the bottom to the top, a substrate,an AlN nucleation layer, an AlN intrinsic layer, an AlGaN intrinsic layer, an n-type AlGaN layer, an n electrode, an i-type AlGaN layer, a P-type BN layer, and a p electrode, wherein the p-type BN layer is made of Mg-doped wurtzite boron nitride material having a thickness of 60 to 100 nm and a doped concentration over 5*10<17> to 1*10<19>cm-3. Since the P-type boron nitride provides holes, the detector is shorter in response time and improved in quantum efficiency and spectral response. The ultraviolet detector can be used for optical communication, biochemical analysis, ozone detection and public security criminal investigation.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to an ultraviolet detector, which can be used in optical communication, biochemical analysis, biomedicine test, ozone detection and public security criminal investigation. [0002] technical background [0003] The detection technology is divided into three parts: ultraviolet detection, infrared detection and laser detection. Like laser detection and infrared detection, ultraviolet detection technology is becoming more and more important in military and civilian fields. In the military field, the use of ultraviolet detection technology has led to the rapid development of optical communication and biochemical analysis, which has attracted the military's great attention. In the civil field, the use of ultraviolet detection technology makes biomedical testing, ozone detection and public security criminal investigation very convenient. Therefore, ultraviole...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105H01L31/18H01L31/0304
CPCH01L31/03044H01L31/105H01L31/1856Y02P70/50
Inventor 周小伟吴金星王燕丽李培咸许晟瑞马晓华郝跃
Owner XIDIAN UNIV
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