Fabrication method of silicon nitride-titanium-silicon nitride cantilever beam for supporting microbridge structure
A technology of micro-bridge structure and manufacturing method, applied in the direction of micro-structure technology, micro-structure device, manufacturing micro-structure device, etc., can solve problems such as deformation, achieve high stability, small deformation, and simple method
Active Publication Date: 2019-12-27
NANJING UNIV OF SCI & TECH
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to provide a method for manufacturing a silicon nitride-titanium-silicon nitride cantilever beam used to support a microbridge structure, so as to solve the problem of uncooled infrared focal plane array pixel bridge leg cantilever due to membrane tension. Deformation problems caused by (compressive) stress
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[0026] In order to illustrate the technical scheme and technical purpose of the present invention, the present invention will be further introduced below in conjunction with the accompanying drawings and specific embodiments.
[0027] combine figure 1 , a method for manufacturing a silicon nitride-titanium-silicon nitride cantilever beam for supporting a microbridge structure of the present invention, comprising the following steps:
[0028] Step S00, cleaning the wafer:
[0029] Submerge the wafer in acetone solution and ultrasonically clean it for 8-12 minutes; take it out and place it in isopropanol solution and ultrasonically clean it for 8-12 minutes; take it out and rinse it with deionized water, dry it with inert gas; move it into a nitrogen oven, 130- Bake at 160°C for 13-17 minutes.
[0030] Among them, the inert gas is preferably nitrogen.
[0031] Step S10, forming electrode anchor points on the wafer surface:
[0032] Preferably, HDMS treatment is performed on ...
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The invention discloses a manufacturing method of a silicon nitride-titanium-silicon nitride cantilever beam used for supporting a micro-bridge structure, which comprises the steps of forming electrode anchor points on the surface of a wafer; preparing a sacrificial layer on the surface of the wafer; preparing a first silicon nitride film on the surface of the wafer; forming through holes connecting electrodes on the silicon nitride film and the sacrificial layer; forming electrode columns on the electrode anchor points; preparing a titanium film on the wafer; preparing a second silicon nitride film with the stress state being opposite to the stress state of the first silicon nitride film on the wafer; and etching the first silicon nitride film, the titanium film and the second silicon nitride film to form a cantilever beam structure. The manufacturing method can complete the stress balance of the structure during the film deposition process without adding additional process steps, sothat the method is simpler and more suitable for large-scale production.
Description
technical field [0001] The invention belongs to the technical field of microelectronic processing, in particular to a method for manufacturing a silicon nitride-titanium-silicon nitride cantilever beam used to support a microbridge structure. Background technique [0002] The infrared focal plane detector is the core component of the thermal imaging system. With the rapid development of MEMS technology, high-performance, low-cost uncooled infrared focal plane devices have been widely used in military, industrial, security monitoring, meteorology and other fields, such as thermal imaging cameras, night vision cameras, thermal sensor. The main performance of an infrared detector is determined by many factors such as infrared absorption rate, temperature coefficient of resistance (TCR), thermal insulation and noise performance. Among them, the absorptivity of the focal plane array to infrared radiation and the heat conduction of the pixel are important parameters that affect ...
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IPC IPC(8): B81C1/00
CPCB81C1/0015B81C1/00666
Inventor 何勇方中陈哲权苏岩姜波周同
Owner NANJING UNIV OF SCI & TECH