Active switch and manufacturing method thereof, and display device
A manufacturing method and switching technology, which can be used in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., and can solve problems such as large leakage current
Inactive Publication Date: 2019-05-07
HKC CORP LTD
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[0004] Based on this, it is necessary to provide an active switch, a manufacturing method thereof, and a display device for the large leakage current of the thin film transistor made of the BCE structure, which causes the IS phenomenon of the display device during the reliability test.
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[0045] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Alternative embodiments of the application are presented in the accompanying drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the application more thorough and comprehensive.
[0046] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes ...
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Abstract
The present application relates to a manufacturing method of an active switch. The method comprises the steps of: providing a substrate, and forming a gate on the substrate; depositing a gate insulation layer on the gate, and covering the gate with the gate insulation layer, wherein the gate insulation layer comprises a first sub gate insulation layer, a second sub gate insulation layer and a third sub gate insulation layer which are stacked in order, depositing the first sub gate insulation layer at a first rate, depositing a second sub gate insulation layer at a second rate, and depositing athird sub gate insulation layer at a third rate; and forming an active layer, a composite doping layer and a source-drain electrode in order on the gate insulation layer, wherein the wet etching process and the dry etching process are employed twice to form the active layer, the composite doping layer, the source-drain electrode and a channel region. The manufacturing method of the active switchcan effectively reduce the light leakage current of the active switch device and can improve the IS phenomenon. The present invention further provides an active switch and a display device.
Description
technical field [0001] The present application relates to the field of display technology, in particular to an active switch, a manufacturing method thereof, and a display device. Background technique [0002] As a thin film transistor that plays a very important role in the working performance of the display panel, it is a very important key device in the display technology. With the iterative development of display technology, display devices with higher performance, high image quality and large size have become a development trend, and are also factors that directly affect user viewing experience and shopping experience. In terms of high performance, if a display device is to have higher performance, one of the aspects requires the display device to be equipped with a high-performance thin film transistor device. [0003] In the usual manufacturing process of amorphous silicon thin film transistors, BCE (Back Channel Etching, back channel etching) structure is adopted. T...
Claims
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Login to View More IPC IPC(8): H01L21/336H01L29/786H01L29/423
Inventor 杨凤云卓恩宗
Owner HKC CORP LTD