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A gallium nitride-based ohmic contact structure and its preparation method

An ohmic contact and gallium nitride-based technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems that restrict the performance of proportional gallium nitride ohmic contacts, so as to improve the degree of fusion and reduce costs , the effect of reducing the temperature of the alloy

Active Publication Date: 2021-09-28
安徽长飞先进半导体有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of sequentially depositing Ti / Al or Ta / Al metals, due to the limitation of the high melting points of Ti and Ta, these two metals may form a barrier layer for the downward diffusion of Al materials, which restricts the process parameter adjustment of the three methods. Ratio of metal thickness and properties of GaN ohmic contacts formed

Method used

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  • A gallium nitride-based ohmic contact structure and its preparation method
  • A gallium nitride-based ohmic contact structure and its preparation method
  • A gallium nitride-based ohmic contact structure and its preparation method

Examples

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Embodiment 1

[0036] A method for preparing a gallium nitride-based ohmic contact structure, comprising the following steps:

[0037] (1) Definition of ohmic contact area: In the surface layer x Al y Ga 1-x-y An ohmic contact formation region is defined on the material of N, where x=0, y=0.2. Including defining the ohmic contact formation area by photolithography, using RIE, ICP etching or wet etching to completely remove the passivation layer under the defined ohmic contact area, the material of the passivation layer is SiN, SiO 2 、Al 2 o 3 , A multi-layer structure composed of one or more combinations of AlN;

[0038] (2) Ohmic contact metal electrode deposition: the first composite metal layer is deposited in the ohmic contact formation region by co-sputtering, and the first composite metal layer is a Ta / Ti / Al composite metal layer, wherein Ta, Ti The atomic percentages of Al and Al are 70%, 10%, and 20% respectively; continue to form an Al layer and a metal cap layer by sputtering...

Embodiment 2

[0042] A method for preparing a gallium nitride-based ohmic contact structure, comprising the following steps:

[0043] (1) Definition of ohmic contact area: In the surface layer x Al y Ga 1-x-y An ohmic contact formation region is defined on the material of N, where x=0.1, y=0.15. Including defining the ohmic contact formation area by photolithography, using RIE, ICP etching or wet etching to completely remove the passivation layer under the defined ohmic contact area. The material of the passivation layer may be SiN, SiO 2 、Al 2 o 3 , A multi-layer structure composed of one or more combinations of AlN;

[0044] (2) Ohmic contact metal electrode deposition: the first composite metal layer is deposited in the ohmic contact formation region by co-sputtering, and the first composite metal layer is a Ta / Al composite metal layer, wherein the atoms of Ta and Al The percentages are 75% and 25% respectively; continue to form an Al layer and a metal cap layer by sputtering or ev...

Embodiment 3

[0048] A method for preparing a gallium nitride-based ohmic contact structure, comprising the following steps:

[0049] (1) Definition of ohmic contact area: In the surface layer x Al y Ga 1-x-y An ohmic contact formation area is defined on the material of N, where x=0.25, y=0.25. Including defining the ohmic contact formation area by photolithography, using RIE, ICP etching or wet etching to completely remove the passivation layer under the defined ohmic contact area. The material of the passivation layer may be SiN, SiO 2 、Al 2 o 3 , A multi-layer structure composed of one or more combinations of AlN;

[0050] (2) Ohmic contact metal electrode deposition: the first composite metal layer is deposited in the ohmic contact formation region by co-sputtering, and the first composite metal layer is a Ta / Ti / Al composite metal layer, wherein Ta, Ti The atomic percentages of Al, Al are 55%, 10%, and 35% respectively; continue to form a second composite metal layer by co-sputter...

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Abstract

The present invention discloses a gallium nitride-based ohmic contact structure and a preparation method thereof. The preparation method includes the following steps: providing a surface layer of In x Al y Ga 1‑x‑y N material, by co-sputtering method in the In x Al y Ga 1‑x‑y Deposit the first composite metal layer on the surface of the N material, and the first composite metal layer is a Ta / Ti / Al composite metal layer or a Ta / Al composite metal layer; anneal the deposited material at 500-1500°C to form an ohmic contact . And according to this preparation method, a GaN-based ohmic contact structure is formed. This structural setting can increase the degree of metal eutectic, and at the same time, it can prevent Ta and Ti from becoming the barrier layer when Al metal diffuses downward, so as to reduce the alloy annealing temperature, and obtain a smoother ohmic contact electrode surface and lower Ohmic contact resistivity.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a gallium nitride-based ohmic contact structure and a preparation method thereof. Background technique [0002] As a typical representative of the third-generation wide-bandgap semiconductor materials, GaN-based materials have the characteristics of large bandgap, high electron saturation drift velocity, high critical breakdown field strength, high thermal conductivity, excellent corrosion resistance and radiation resistance, etc. It can be used to make high-temperature, high-frequency and high-power electronic devices. In addition, GaN also has excellent electronic properties, and can form a modulation-doped AlGaN / GaN heterostructure with AlGaN to obtain a higher two-dimensional electron gas (2DEG) density than the second-generation compound semiconductor heterostructure, and the electron concentration is as high as 10 12 ~10 13 cm -1 , electron mobility u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/285H01L29/45
Inventor 刘煦冉程海英王敬宋东波
Owner 安徽长飞先进半导体有限公司
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