Large array scale infrared detector ground wire structure
An infrared detector and ground wire technology, which is applied in the field of microelectronics technology, can solve the problem of inconsistent response in the center area and edge area of large-scale infrared detectors, and achieve the effect of improving response uniformity and eliminating partial pressure differences.
Active Publication Date: 2021-02-19
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
View PDF9 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0009] An embodiment of the present invention provides a large-array-scale infrared detector ground wire structure to solve the problem of inconsistency in response between the central area and the edge area of the large-array-scale infrared detector in the prior art
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0032] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.
[0033] Device embodiment
[0034] Embodiments of the present invention provide a large-scale array-scale infrared detector ground wire structure, such as Figure 4 As shown, it includes: a readout circuit 10, a plurality of interconnected indium columns 12, a P-type region 14, a plurality of N-type regions 16, an N-type layer 18, a ground lead-out electrode 20, an N-type layer electrode 22, a lead 24 and In-circuit wiring 26;
[...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a large-array-scale infrared detector ground wire structure, comprising: a readout circuit, a plurality of interconnected indium columns, a P-type region, a plurality of N-type regions, an N-type layer, a ground lead-out electrode, an N-type Layer electrodes, leads, and wiring in the circuit; multiple interconnected indium columns are set on the readout circuit, P-type areas are set on multiple interconnected indium columns, N-type areas are embedded in the P-type area, and multiple N-type The area is in contact with a plurality of interconnected indium pillars, the N-type layer is set on the P-type area, the ground wire lead-out electrode is set on the upper surface of the readout circuit, and the N-type layer electrode is set on the upper surface of the N-type layer without pixels area, the lead wire is connected to the lead-out electrode of the ground wire and the N-type layer electrode, the wiring in the circuit is embedded in the readout circuit, and the wiring in the circuit is connected to the lead-out electrode of the ground wire; it can effectively eliminate the central pixel and boundary image on a large-scale array chip The difference in voltage division caused by the difference in series resistance of the element can improve the overall response uniformity of the device.
Description
technical field [0001] The invention relates to the technical field of microelectronic technology, in particular to a large-array-scale infrared detector ground wire structure. Background technique [0002] In recent years, with the development of semiconductor technology, and the demand for high-performance and high-resolution cooled infrared detectors in military, aerospace, aviation, medicine, agriculture, and security has gradually increased, large area arrays based on flip-chip interconnection packaging technology The research and development of large-scale infrared devices is developing rapidly. As the area of the large area array chip increases, the response inconsistency between the peripheral pixel and the central pixel increases. [0003] For example, medium-wave or short-wave infrared 4K×4K resolution devices have a pixel size of 15 μm and a chip area of up to 65 mm×65 mm; long-wave infrared 1K×1K resolution devices have a pixel size of 30 microns and a chip ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 刘世光张轶王成刚吴卿
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP