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Infrared focal plane detector chip and preparation method thereof

A detector chip and infrared focal plane technology, which is applied in electric radiation detectors, radiation pyrometry, instruments, etc., can solve problems such as the influence of response uniformity, and achieve the effect of improving response uniformity

Active Publication Date: 2021-06-04
北京智创芯源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above problems, the present disclosure provides an infrared focal plane detector chip and its preparation method, which solves the problem that the difference in the response signal of the photosensitive element between the center and the edge of the infrared focal plane detector chip in the prior art has a relatively large effect on the response uniformity. technical issues affecting

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  • Infrared focal plane detector chip and preparation method thereof
  • Infrared focal plane detector chip and preparation method thereof
  • Infrared focal plane detector chip and preparation method thereof

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Embodiment 1

[0064] Such as Figure 6 and Figure 7 As shown, the embodiment of the present disclosure provides a planar junction infrared focal plane detector chip, including a substrate 301, a doped region 303, a dielectric film layer 302, a first contact hole 304, a second contact hole 305, a first The electrode metal layer 306 and the second electrode metal layer 307 .

[0065] Exemplarily, the substrate 301 is a semiconductor material wafer of the first conductivity type, such as indium antimonide, mercury cadmium telluride, and the like.

[0066] In this embodiment, the doped region 303 is a doped region of the second conductivity type, and the doped region 303 is located in the surface of the substrate 301 , that is, the upper surface of the doped region 303 is flush with the upper surface of the substrate 301 . Moreover, several doped regions 303 are arranged in an array to form an array of doped regions (not marked in the figure). Taking the P-type mercury cadmium telluride (Hg...

Embodiment 2

[0076] Such as Figure 9 and Figure 10 As shown, the embodiment of the present disclosure provides a mesa junction infrared focal plane detector chip, including a substrate 401, a doped region 403, a dielectric film layer 402, a first contact hole 404, a second contact hole 405, a first The electrode metal layer 406 and the second electrode metal layer 407 .

[0077] Exemplarily, the substrate 401 is a semiconductor material wafer of the first conductivity type, such as indium antimonide, mercury cadmium telluride, and the like.

[0078] In this embodiment, the doped region 403 is a doped region of the second conductivity type, and the doped region 403 is located on the surface of the substrate 401, that is, the lower surface of the doped region 403 is flush with the upper surface of the substrate 401, and several The doped regions 403 are arranged in an array, forming an array of doped regions (not marked in the figure). Taking the P-type mercury cadmium telluride (HgCdTe...

Embodiment 3

[0087] This embodiment provides a method for preparing a planar junction infrared focal plane detector chip. Figure 11 It is a schematic flowchart of a method for preparing a planar junction infrared focal plane detector chip shown in an embodiment of the present disclosure. Figure 12-Figure 18 It is a cross-sectional structure and a front top view schematic diagram formed in related steps of a method for preparing a planar junction infrared focal plane detector chip shown in an embodiment of the present disclosure. Below, refer to Figure 11 and Figure 12-Figure 18 The detailed steps of an exemplary method of the method for manufacturing a planar junction infrared focal plane detector chip proposed in the embodiments of the present disclosure will be described.

[0088] Such as Figure 11 As shown, the preparation method of the planar junction infrared focal plane detector chip of the present embodiment includes the following steps:

[0089] Step S101 : providing a fir...

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Abstract

The present disclosure provides an infrared focal plane detector chip and a preparation method thereof. The infrared focal plane detector chip includes a plurality of doped regions of the second conductivity type arranged in an array in or on the surface of the substrate; wherein , the size of each doped region increases gradually along the direction from the center of the doped region array to the edge of the doped region array; it is located above the doped region and covers the surface of the doped region and the substrate The dielectric film layer on the bottom surface; the first electrode metal layer located above the dielectric film layer and arranged at the corresponding position of the doped region; wherein, the first electrode metal layer passes through the first contact hole and its corresponding The doped region forms an ohmic contact to form a photosensitive element. On the basis of ensuring the performance of the detector chip, only by appropriately changing the size of the doped area (photosensitive element size), the response signals of each photosensitive element in the edge of the detector chip and the central area are basically consistent, which can effectively improve the response uniformity of the infrared detector. sex.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to an infrared focal plane detector chip and a preparation method thereof. Background technique [0002] Infrared detector technology is the core of infrared technology, and the development of infrared detectors leads and restricts the development of infrared technology. The infrared focal plane detector is mainly composed of a detector chip, a readout circuit, a metal Dewar, a refrigerator, and a processing circuit. Such as figure 1 As shown, the detector chip and the readout circuit are flip-chip interconnected to form a chipset packaged in a metal Dewar. The metal Dewar provides the vacuum environment required for the detector chip to work and provides optical and electrical interfaces. The refrigerator Provide the low-temperature environment required for the detector to work, and the readout circuit and peripheral processing circuit perform storage, ampl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146G01J5/20
CPCG01J5/20G01J2005/204H01L27/14605H01L27/14649H01L27/14683
Inventor 不公告发明人
Owner 北京智创芯源科技有限公司