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Semiconductor structures and associated fabrication methods

A semiconductor and conductive structure technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.

Active Publication Date: 2021-08-06
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Thus, while conventional LED die-to-wafer bonding processes are often adequate for their intended purpose, these are not entirely satisfactory in every respect.

Method used

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  • Semiconductor structures and associated fabrication methods
  • Semiconductor structures and associated fabrication methods
  • Semiconductor structures and associated fabrication methods

Examples

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Embodiment Construction

[0011] The following discloses provide many different embodiments or examples of different features of the present disclosure. The specific examples of the components and arrangements are described below to simplify this disclosure. Of course, these are only examples and are not intended to limit. For example, the first member in the following description may be formed over the second member or may include an embodiment in which the first member and the second member are formed in direct contact, and may contain additional members. An embodiment formed between the first member and the second member such that the first member and the second member may be in direct contact. Additionally, the components symbols and / or letters can be repeated in various examples. This repeat is for simplified and clear purposes, and itself does not indicate the relationship between the various embodiments and / or configurations discussed.

[0012] Further, in order to facilitate the description, it...

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Abstract

Embodiments of the present invention disclose a semiconductor structure and an associated manufacturing method. The semiconductor structure includes: a first light emitting diode (LED) layer including a first LED of a first color type, the first LED layer having a first side and a second side opposite the first side; a second LED layer above the first LED layer, the second LED layer includes second LEDs of a second color type, and the second LED layer has a first side and a second LED layer opposite the first side side; and a third LED layer above the second LED layer, the third LED layer comprising third LEDs of a third color type, and the third LED layer having a first side and the first side A second side opposite to one side; wherein said first color type, said second color type, and said third color type are different from each other.

Description

Technical field [0001] Embodiments of the present invention relate to semiconductor structures and associated manufacturing methods. Background technique [0002] LED (LED) devices have experienced rapid growth in recent years. When a voltage is applied, the LED device emits light. Attribution of the LED device is increasingly popular with, for example, the favorable characteristics of small devices, long life, high-performance energy consumption and good persistence and reliability. [0003] The manufacturing of the LED device can involve a die to a wafer bonding process, wherein a plurality of LED die engaged a plurality of pads on the wafer. Conventional die to the wafer bonding process uses an automatic die bonding machine having a flux backout or eutectic die to a wafer bonder. During the joint process, the LED die is offset from these lateral positions in any given direction in any given direction. In some cases, the die offset can exceed + / - 38 microns. As the LED duct siz...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L23/528H01L23/522H01L21/768H01L23/488
CPCH01L25/0753H01L25/167H01L33/44H01L33/62H01L33/0093H01L23/5226H01L33/0075
Inventor 刘丙寅林勇志陈祈铭
Owner TAIWAN SEMICON MFG CO LTD