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A method and device for improving the heating performance of a heater in a chemical vapor deposition chamber
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A chemical vapor deposition, heater technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as uneven film deposition, achieve compensation for non-uniformity and surface flatness, prolong cycle Service life, effect of improving heating performance
Active Publication Date: 2021-06-22
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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[0007] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a method and device for improving the heating performance of the heater in the chemical vapor deposition chamber, which is used to solve the problem of uneven film deposition in the prior art
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Embodiment 1
[0051] This embodiment provides a method for fabricating a TiN thin film, the method at least comprising:
[0052] A substrate is provided, and the substrate is heated to a certain temperature; Ti[N(CH 3 ) 2 ] 4 As a reaction gas, a gas containing N and H elements is introduced at the same time, the gas containing N and H elements is treated as a plasma, and the plasma is used to bombard the reaction gas and react with the reaction gas, thereby A TiN film with a flat surface is formed on the surface of the substrate.
[0053] The substrate can be any component that needs to be deposited with a TiN film, for example, it can be a heater that needs to be improved in heating performance or a wafer that needs to be deposited with a TiN film, which is not limited here.
[0054] As an example, the plasma is also used to remove the Ti[N(CH 3 ) 2 ] 4 The hydrocarbon groups produced by the reaction, wherein the plasma includes N ions and H ions, the H ions are combined with the ca...
Embodiment 2
[0059] This embodiment provides a method for improving the heating performance of a heater in a chemical vapor deposition chamber, the method at least comprising:
[0060] Such as Figure 4 , Figure 5 as well as Figure 7 As shown, the heater 11 is set to a certain temperature, and Ti[N(CH 3 ) 2 ] 4 As the reaction gas 12, a gas 13 containing N and H elements is introduced at the same time, the gas 13 containing N and H elements is treated as a plasma, and the plasma is used to bombard the reaction gas 12 and react with the reaction gas 12 reacts, thereby forming a TiN thin film 14 with a flat surface on the surface of the heater 11 , and the heating performance of the heater 11 is improved by the TiN thin film 14 .
[0061] As an example, the temperature range of the heater 11 is set to be 100°C to 300°C. More preferably, the temperature range of the heater 11 is set to be 150°C to 250°C. In this embodiment, the temperature of the heater 11 is set at 200°C. In the pr...
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Abstract
The present invention provides a method and device for improving the heating performance of a heater in a chemical vapor deposition chamber, comprising: setting the heater to a certain temperature, feeding Ti[N(CH) into the chamber 3 ) 2 ] 4 As a reaction gas, a gas containing N and H elements is introduced at the same time, the gas containing N and H elements is processed into plasma, and the plasma is used to bombard the reaction gas and react with the reaction gas, thereby A TiN film with a flat surface is formed on the surface of the heater, and the heating performance of the heater is improved by the TiN film. The method of the invention can well compensate for the non-uniformity of the thickness of the grown film and the surface flatness caused by the non-uniform temperature and poor surface morphology of the heater, thereby prolonging the cycle life of the heater.
Description
technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a method and a device for improving the heating performance of a heater in a chemical vapor deposition chamber. Background technique [0002] Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a process technology in which reactant substances react chemically under gaseous conditions to generate solid substances and deposit them on the surface of a heated solid substrate, and then obtain a solid material layer. It is obtained by chemical vapor deposition equipment. accomplish. Since the gas molecules or ions participating in the reaction during the CVD preparation of materials need to be deposited on the substrate at a certain temperature according to different processes, CVD equipment is usually equipped with a heater for heating the substrate. [0003] Usually, semiconductor equipment is prone to various failures during the process. I...
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Application Information
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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/34C23C16/46C23C16/455
Inventor 徐晓伟何朋杨益张冠群林明贤
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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