Semiconductor device and forming method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as semiconductor device performance needs to be improved, and achieve the effects of improving performance, increasing driving current, and reducing resistance
Active Publication Date: 2019-05-21
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0004] However, the performance of semiconductor devices composed of existing fin field effect transistors needs to be improved
Method used
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Embodiment Construction
[0029] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.
[0030] A method for forming a semiconductor device, comprising: providing a semiconductor substrate, the semiconductor substrate has fins and an isolation structure covering the side walls of the fins; forming a gate structure across the fins on the isolation structure, the gate structure Covering part of the top surface and part of the sidewall surface of the fin; forming sidewalls across the fin on the sidewalls on both sides of the gate structure; forming source-drain doping in the first gate structure and the fins on both sides of the sidewall Area.
[0031] However, the performance of the semiconductor device formed by the above-mentioned method is relatively poor. After research, it is found that the reasons are:
[0032] The sidewall is used to define the distance between the gate structure and the source-drain doped layer. In order to increase the driving cur...
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The invention relates to a semiconductor device and a forming method thereof. The semiconductor device comprises a semiconductor substrate, a fin part located on the semiconductor substrate, an isolation structure located on the semiconductor substrate and covering a part of the side wall of the fin part, a first gate structure located on the isolation structure and stretching across the fin part,side walls located on the side walls of the two sides of the first gate structure and stretching across the fin part and source leakage doping areas located on the first gate structure and in the portions and located on the two sides of the side walls and in the fin part. The first gate structure covers a part of the top surface and a part of the side wall surface of the fin part; the side wallscomprise a bottom side wall region and a top side wall region, the bottom side wall region is located on the surface of the isolation structure and covers a part of the side wall of the first gate structure and a part of the side wall of the fin part, the top of the bottom wall region is lower than the top surface of the fin part, the top side wall region is located on the bottom side wall regionand the top surface of the fin part, and the thickness of the bottom side wall region is larger than the thickness of the top side wall region. The performance of the semiconductor device is improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS transistors are one of the most important components in modern integrated circuits. The basic structure of a MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, a source region located in the semiconductor substrate on one side of the gate structure, and a drain region located in the semiconductor substrate on the other side of the gate structure. The working principle of the MOS transistor is: a voltage is applied to the gate structure, and a switching signal is generated by adjusting the current in the channel at the bottom of the gate structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resultin...
Claims
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IPC IPC(8): H01L29/78H01L21/336
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP