Light emitting diode chip and manufacturing method thereof
A technology of light-emitting diodes and chips, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of reducing the luminous brightness of chips, and achieve the effect of improving light-emitting efficiency and luminous brightness and reducing light.
Inactive Publication Date: 2019-05-21
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
[0007] The embodiment of the present invention provides a light-emitting diode chip and its manufacturing method, which can solve the problem in the prior art that the transparent conductive layer absorbs the light emitted by the active layer and reduces the luminance of the chip
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[0033] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0034] An embodiment of the present invention provides a light emitting diode chip. figure 1 It is a schematic structural diagram of a light emitting diode chip provided by an embodiment of the present invention. see figure 1 , the LED chip includes a substrate 10 , an N-type semiconductor layer 21 , an active layer 22 , a P-type semiconductor layer 23 , a transparent conductive layer 30 , a dielectric layer 40 , an N-type electrode 51 and a P-type electrode 52 . The N-type semiconductor layer 21, the active layer 22, the P-type semiconductor layer 23 and the transparent conductive layer 30 are sequentially stacked on the substrate 10, and the transparent conductive layer 30 is provided with a groove 100 extending to the N-type semico...
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The invention discloses a light emitting diode chip and a manufacturing method thereof, belonging to the technical field of semiconductors. The light emitting diode chip comprises a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a transparent conductive layer, a dielectric layer, an N-type electrode, and a P-type electrode; the transparent conductive layeris provided with a plurality of first through holes extending toward the P-type semiconductor layer; the dielectric layer is disposed in grooves and on the transparent conductive layer, and fills thefirst through holes; a plurality of second through holes extending to the transparent conductive layer are disposed on the dielectric layer on the transparent conductive layer; the plurality of second through holes and the plurality of first through holes are arranged on at least one straight line; each first through hole is located between two adjacent second through holes on the same straight line; each line is at the interface of the dielectric layer and the transparent conductive layer; and the N-type electrode and the P-type electrode are disposed on the dielectric layer. According to the invention, the light absorbed by the transparent conductive layer can be reduced by providing the first through holes extending toward the P-type semiconductor layer on the transparent conductive layer.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode chip and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Chips are the core components of LEDs. [0003] The existing LED chip includes a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a P-type electrode and an N-type electrode, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate The P-type semiconductor layer is provided with a groove extending to the N-type semiconductor layer, the N-type electrode is arranged on the N-type semiconductor layer in the groove, and the P-type electrode is arranged on the P-type semiconductor layer. [0004] Since the material of the P-type electrode ...
Claims
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IPC IPC(8): H01L33/14H01L33/20H01L33/38H01L33/00
Inventor 尹灵峰高艳龙马磊王江波
Owner HC SEMITEK ZHEJIANG CO LTD